Mask pattern

Abstract

A mask pattern useful for preventing the pattern distortion caused by light transition is disclosed, including a transmissive substrate; a first light-shielding line pattern formed to have an oblong form on the transmissive substrate; second and third light-shielding line patterns of an oblong form spaced apart from a long side of the first light-shielding line pattern and having a width of narrower than a width of edge portions of the first light-shielding line pattern, wherein a space at right to the side of the first light-shielding line pattern is formed between the second and third light-shielding line patterns; and a concave region formed at the long side of the first light-shielding line pattern facing the space between the second and third light-shielding line patterns.

What is claimed is: 
     
       1. A mask pattern comprising: a transmissive substrate;   a first light-shielding line pattern having an oblong form on the transmissive substrate and having first, second, third, and fourth sides, wherein the first and second sides have a center portion and side edge portions, and the center portion of at least one of the first and second sides comprises a concave region, and the first and second sides are longer than the third and fourth sides;   second and third light-shielding line patterns of an oblong form spaced apart from the second side of the first light-shielding line pattern and having a width narrower than a width of the side edge portions of the first light-shielding line pattern; and including   a first space perpendicular to the second side of the first light-shielding line pattern between the second and third light-shielding line patterns;   a second space in parallel with the second side of the first light-shielding line pattern between the first light-shielding line pattern and the second and third light-shielding line patterns,   wherein the concave region faces the first space.   
     
     
       2. The mask pattern as claimed in claim 1, wherein the concave region is formed to have a size of less than resolution limit. 
     
     
       3. The mask pattern as claimed in claim 2, wherein both the first and second sides of the first light-shielding line pattern at the center portion have the concave region. 
     
     
       4. The mask pattern as claimed in claim 3, wherein the concave region has a dimension of 0.2×0.05 μm or of 0.15×0.03 μm. 
     
     
       5. The mask pattern as claimed in claim 1, wherein a width of the first light-shielding line pattern is formed to be wider than 1.5 times of the second space. 
     
     
       6. The mask pattern as claimed in claim 5, wherein the second space is in the range of 0.3×(λ/N.A.)-0.75×(λ/N.A.) where λ is a wavelength of exposed light and N.A. is a numerical aperture of a lens. 
     
     
       7. The mask pattern as claimed in claim 1, wherein the second and third light-shielding line patterns are formed to have the same width as the width of the first light-shielding line pattern. 
     
     
       8. The mask pattern as claimed in claim 1, wherein the side edge portions diagonally extend from the center portion of the first light-shielding line pattern. 
     
     
       9. The mask pattern as claimed in claim 1, further comprising fourth light-shielding line patterns formed at sides of the second and third light-shielding line patterns. 
     
     
       10. The mask pattern as claimed in claim 9, further comprising third spaces between the second and third light-shielding line patterns and the fourth light-shielding line patterns. 
     
     
       11. A mask pattern comprising: a transmissive substrate;   a first light-shielding line pattern having an oblong form on the transmissive substrate and having first, second, third, and fourth sides, wherein the first and second sides have a center portion and side edge portions, and the center portion of at least one of the first and second sides comprises a first concave region, the first and second sides are longer than the third and fourth sides;   second and third light-shielding line patterns formed at the second side of the first light-shielding line pattern to have a width narrower than a width of the side edge portions of the first light-shielding line pattern and spaced apart from the first light-shielding line pattern;   a first space perpendicular to the second side of the first light-shielding line pattern formed between the second and third light-shielding line patterns;   wherein the first concave region faces the first space between the second and third light-shielding line patterns;   a fourth light-shielding line pattern having a shape substantially the same as the first light-shielding line pattern formed at the second side of the first light-shielding line pattern and spaced apart from the first light-shielding line pattern, wherein the fourth light-shielding line pattern has first, second, third, and fourth sides, and a center portion of at least one of the first and second sides comprises a second concave region;   fifth and sixth light-shielding line patterns formed on the transmissive substrate at the first side of the fourth light-shielding line pattern;   a second space perpendicular to the first side of the fourth light-shielding line pattern formed between the fifth and sixth light-shielding line patterns,   wherein the second concave region faces the second space formed between the sixth and fifth light-shielding line patterns;   a third space in parallel with the second side of the first light-shielding line pattern between the first light-shielding line pattern and the second and third light-shielding patterns; and   a fourth space in parallel with the first side of the fourth light-shielding line pattern between the fourth light-shielding line pattern and the fifth and sixth light-shielding patterns.   
     
     
       12. The mask pattern as claimed in claim 11, wherein the fourth light-shielding line pattern is in parallel with the first light-shielding line pattern. 
     
     
       13. The mask pattern as claimed in claim 11, wherein the first and second concave regions are formed to have a size of less than resolution limit. 
     
     
       14. The mask pattern as claimed in claim 11, wherein both the first and second sides of the first and fourth light-shielding line patterns have the first and second concave regions, respectively. 
     
     
       15. The mask pattern as claimed in claim 14, wherein the first and second concave regions have a dimension of 0.2×0.05 μm or 0.15×0.03 μm. 
     
     
       16. The mask pattern as claimed in claim 11, wherein the width of the first and fourth light-shielding line patterns are 1.5 times greater than the third and fourth spaces. 
     
     
       17. The mask pattern as claimed in claim 11, wherein the third and fourth spaces are in the range of 0.3×(λ/N.A.)-0.75×(λ/N.A.) where λ is a wavelength of exposed light and N.A. is a numerical aperture of a lens. 
     
     
       18. The mask pattern as claimed in claim 11, wherein the second third, fifth, and sixth light-shielding line patterns have the same width as the first and fourth light-shielding line patterns. 
     
     
       19. A mask pattern comprising: a transmissive substrate;   a first light-shielding line pattern having an oblong form on the transmissive substrate, and having first, second, third, and fourth sides, wherein the first and second sides have a center portion and side edge portions, and the second side at the center portion has a convex region, and the first and second sides are longer than the third and fourth sides;   second and third light-shielding line patterns formed at the second side of the first light-shielding line pattern to have a length longer than twice the width of the first light-shielding line pattern and spaced apart from the first light-shielding line pattern,   a first space perpendicular to the second side of the first light-shielding line pattern between the second and third light-shielding line patterns,   wherein the convex region formed at the second side of the first light-shielding line pattern faces the space between the second and third light-shielding line patterns; and including   a second space in parallel with the second side formed between the first light-shielding line pattern and the second and third light-shielding line patterns.   
     
     
       20. The mask pattern as claimed in claim 19, wherein the convex region is formed to have a size of less than resolution limit. 
     
     
       21. The mask pattern as claimed in claim 20, wherein the convex region is formed to have a dimension of 0.2×0.05 μm or 0.15×0.03 μm. 
     
     
       22. The mask pattern as claimed in claim 19, wherein the width of the first light-shielding line pattern is 1.5 times greater than the second space between the long side of the first light-shielding line pattern and the adjacent second and third light-shielding line patterns. 
     
     
       23. The mask pattern as claimed in claim 19, wherein the second space is in the range of 0.3×(λ/N.A.)-0.75×(λ/N.A.) where λ is a wavelength of exposed light and N.A. is a numerical aperture of a lens.