Photovoltaic device

Abstract

A photovoltaic device is provided which comprises a semiconductor layer, and an electrode comprising an electrode member and an conductive resin layer, wherein the electrode member has a constitution of a complex of a core and a periphery, and the periphery contains no particle with a particle size larger than 2 μm. The electrode of this photovoltaic device exhibits high current collecting efficiency and is reliable in long use term.

What is claimed is: 
     
       1. A photovoltaic device comprising a semiconductor layer, and an electrode comprising an electrode member and a conductive resin layer, wherein the electrode member comprises a core and a periphery, and the periphery contains no particles with a particle size larger than 2 μm. 
     
     
       2. The photovoltaic device according to claim 1, wherein the periphery has a thickness ranging from 1% to 20% of a diameter of the electrode member. 
     
     
       3. The photovoltaic device according to claim 1, wherein the core comprises a material selected from the group consisting of copper, copper alloys, and aluminum. 
     
     
       4. The photovoltaic device according to claim 1, wherein the periphery comprises a material selected from the group of silver, platinum, gold, nickel, tin, and metal oxides. 
     
     
       5. The photovoltaic device according to claim 1, wherein the electrode has a linear shape or a foil shape. 
     
     
       6. The photovoltaic device according to claim 1, wherein the electrode is formed and bonded on a light-introducing face side of the semiconductor layer. 
     
     
       7. The photovoltaic device according to claim 1, wherein the conductive resin layer is constituted of two or more layers. 
     
     
       8. The photovoltaic device according to claim 1, wherein at least the conductive resin layer in direct contact with the electrode member covers completely the electrode member. 
     
     
       9. The photovoltaic device according to claim 1, wherein the conductive resin layer in direct contact with the electrode member has a glass transition temperature of 100° C. or more. 
     
     
       10. The photovoltaic device according to claim 1, wherein the conductive resin layer has a specific resistance ranging from 0.1 to 100 Ωcm. 
     
     
       11. The photovoltaic device according to claim 1, wherein the conductive resin layer has a porosity of 0.04 ml/g or less in measurement of voids with a radius of 1 μm or less. 
     
     
       12. The photovoltaic device according to claim 1, wherein the conductive resin layer has a thickness ranging from 1% to 80% of a diameter of the electrode member. 
     
     
       13. The photovoltaic device according to claim 1, wherein the conductive resin layer has a stack structure constituted of two or more layers, and an outermost layer of the stack structure is composed of a thermoplastic resin or a thermosetting resin. 
     
     
       14. The photovoltaic device according to claim 1, wherein the conductive resin layer has a stack structure constituted of two or more layers, and the conductive resin layer in contact with the electrode member is composed of a thermosetting resin. 
     
     
       15. The photovoltaic device according to claim 1, wherein the periphery is formed by cladding, sputtering, or vacuum deposition. 
     
     
       16. The photovoltaic device according to claim 1, wherein the electrode is bonded and fixed to the surface of the semiconductor layer. 
     
     
       17. The photovoltaic device according to claim 1, wherein the electrode is bonded and fixed to a transparent conductive film formed on the surface of the semiconductor layer.