Sputtering target and production method thereof

Abstract

The present invention provides a sputtering target which generates a reduced quantity of particles during a sputtering and a method for producing such a sputtering target. Mirror treatment is carried out to a sputter surface 2 which is sputtered when forming a thin film, so that the sputter surface 2 has an arithmetic mean roughness Ra of 0.01 μm or below. A sputtering target 1 with such a smooth sputter surface 2 having a small surface roughness enables to reduce a number of particles generated during a sputtering.

What is claimed is: 
     
       1. A sputtering target made of Ti or a Ti alloy whose sputter surface has an arithmetic mean roughness Ra of 0.01 μm or less. 
     
     
       2. A sputtering target as claimed in claim 1, wherein said sputter surface is a concave plane having a predetermined curvature R. 
     
     
       3. A sputtering target as claimed in claim 1, wherein said sputtering target is made from Ti or Ti alloy. 
     
     
       4. A sputtering target production method, said method comprising the steps of: providing a sputter target made of Ti or a Ti alloy; and   subjecting a sputter surface of the sputter target to a mechanical mirror polishing treatment until the sputter surface has an arithmetic mean roughness Ra of 0.01 μm or less.   
     
     
       5. A sputtering target production method as claimed in claim 4, wherein said mirror treatment is carried out by mechanochemical polishing. 
     
     
       6. The sputtering target of claim 1, wherein the target has crystal grains sized 20 μm or smaller.