Semiconductor memory device having a plurality of memory blocks

Abstract

A semiconductor memory device has a plurality of memory blocks. The semiconductor memory device pre-charges a memory block when a block address signal applied to the memory block is identical with a previous block address signal previously applied, and activates the memory block when the block address signal is not identical with the previous block address signal. As a result, a pre-charge operation of a previous block and an activation operation of a present block are simultaneously performed so that the operation speed of an entire system becomes high-speed.

What is claimed is: 
     
       1. A semiconductor memory device having a plurality of memo locks of which operations are controlled by a block address signal, each memory block comprising: a first storage means for receiving a first block address signal and storing it;   a second storage means for receiving the first block address signal generated from the first storage means and storing it if a second block address signal is input;   a comparing means which receives the second block address signal stored in the first storage means and the first block address signal stored in the second storage means, compares the second block address signal with the first block address signal, and determines whether or not the second block address signal is identical with the first block address signal; and   a block activation means which pre-charges the memory block when the first block address signal is identical with the second block address signal, and activates the memory block when the first block address signal is not identical with the second block address signal.   
     
     
       2. A semiconductor memory device having a plurality of memory blocks as set forth in claim 1, wherein the first storage means and the second storage means are enabled by a row address strobe signal.