Device for monitoring and calibrating oxide charge measurement equipment and method therefor

Abstract

A stabilized wafer for monitoring and calibrating oxide charge test equipment. The stabilized wafer comprises; a silicon wafer, a SiO 2 layer of at least 100 angstroms upon the silicon wafer, and a phosphosilicate glass layer containing phosphorus formed in the SiO 2 layer for providing the stabilized wafer by stabilizing an SiO 2 interface and containing oxygen ions. The stabilized wafer is used for monitoring and calibrating oxide charge test equipment.

What is claimed is:  
     
       1. A stabilized wafer for monitoring and calibrating oxide charge test equipment, comprising in combination: a silicon wafer; 
       a SiO2 layer upon said silicon wafer;  
       a polarizable phosphosilicate glass layer containing mobile oxygen ions formed in said SiO2 layer for providing said stabilized wafer by stabilizing an SiO2 interface;  
       wherein said polarizable phosphosilicate glass layer further comprises phosphorus; and  
       a P 2  O 5  molecular layer resulting from annealing said polarizable phosphosilicate glass layer in a temperature range of about 700° C. to about 1000° C.  
     
     
       2. The stabilized wafer of claim  1  wherein said phosophorus comprises gas diffused phosophorus. 
     
     
       3. The stabilized wafer of claim  1  wherein said phosphorus comprises ion implanted phosphorus. 
     
     
       4. The stabilized wafer of claim  1  wherein said SiO 2  layer has a thickness of at least 100 angstroms. 
     
     
       5. The stabilized wafer of claim  1  further comprising MOS metal contacts formed on said phosphosilicate glass layer.