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US6309554B1ExpiredUtilityPatentIndex 84

Method for producing needle diamond-type structure

Assignee: UNIV TOKYOPriority: Jun 12, 1998Filed: Mar 26, 1999Granted: Oct 30, 2001
Est. expiryJun 12, 2018(expired)· nominal 20-yr term from priority
Inventors:FUJISHIMA AKIRAMASUDA HIDEKI
H01J 2201/30457H01J 9/025
84
PatentIndex Score
15
Cited by
9
References
10
Claims

Abstract

A method of producing a needle-like diamond structure including the steps of forming a layer of anodized alumina on a diamond substrate, the anodized alumina having a plurality of through holes; vapor-depositing a substance resistant to plasma etching by a vacuum vapor-depositing method to form dots on said diamond substrate, wherein the layer of anodized alumina acts as a mask for the vapor deposition; removing the anodized alumina; and performing a plasma etching treatment while using the dots as a mask, thereby forming regularly-arranged, needle-like diamond columns.

Claims

exact text as granted — not AI-modified
What is claimed is:  
     
       1. A method of producing a needle-like diamond structure, comprising the steps of: 
       forming a layer of anodized alumina on a diamond substrate, said anodized alumina having a plurality of through holes;  
       vapor-depositing a substance resistant to plasma etching by a vacuum vapor-depositing method to form dots on said diamond substrate, wherein said layer of anodized alumina acts as a mask for the vapor deposition;  
       removing said anodized alumina; and  
       performing a plasma etching treatment while using said dots as a mask, thereby forming regularly-arranged, needle-like diamond columns.  
     
     
       2. The method for producing a needle-like diamond structure as set forth in claim  1 , wherein said plasma etching treatment is conducted in a gaseous atmosphere including oxygen. 
     
     
       3. The method of producing a needle-like diamond structure as set forth in claim  1 , wherein said plasma etching treatment is conducted in a gaseous atmosphere including an inert gas. 
     
     
       4. The method of producing a needle-like diamond structure as set forth in claim  3 , wherein said inert gas is argon. 
     
     
       5. The method of producing a needle-like diamond structure as set forth in claim  1 , wherein said substance resistant to plasma etching is a metal. 
     
     
       6. The method of producing a needle-like diamond structure as set forth in claim  1 , wherein said substance resistant to plasma etching is a metal oxide. 
     
     
       7. The method of producing a needle-like diamond structure as set forth in claim  1 , wherein said substance resistant to plasma etching is a metal nitride. 
     
     
       8. The method of producing a needle-like diamond structure as set forth in claim  1 , further comprising the step of: 
       removing said dots formed by said vapor depositing step.  
     
     
       9. The method of producing a needle-like diamond structure as set forth in claim  1 , wherein the step of removing said anodized alumina is performed by dissolving said anodized alumina using an alkaline solution or an acid solution. 
     
     
       10. The method of producing a needle-like diamond structure as set forth in claim  9 , wherein the solution used to dissolve said anodized alumina is a solution of sodium hydroxide.

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