US6309554B1ExpiredUtilityPatentIndex 84
Method for producing needle diamond-type structure
Est. expiryJun 12, 2018(expired)· nominal 20-yr term from priority
H01J 2201/30457H01J 9/025
84
PatentIndex Score
15
Cited by
9
References
10
Claims
Abstract
A method of producing a needle-like diamond structure including the steps of forming a layer of anodized alumina on a diamond substrate, the anodized alumina having a plurality of through holes; vapor-depositing a substance resistant to plasma etching by a vacuum vapor-depositing method to form dots on said diamond substrate, wherein the layer of anodized alumina acts as a mask for the vapor deposition; removing the anodized alumina; and performing a plasma etching treatment while using the dots as a mask, thereby forming regularly-arranged, needle-like diamond columns.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1. A method of producing a needle-like diamond structure, comprising the steps of:
forming a layer of anodized alumina on a diamond substrate, said anodized alumina having a plurality of through holes;
vapor-depositing a substance resistant to plasma etching by a vacuum vapor-depositing method to form dots on said diamond substrate, wherein said layer of anodized alumina acts as a mask for the vapor deposition;
removing said anodized alumina; and
performing a plasma etching treatment while using said dots as a mask, thereby forming regularly-arranged, needle-like diamond columns.
2. The method for producing a needle-like diamond structure as set forth in claim 1 , wherein said plasma etching treatment is conducted in a gaseous atmosphere including oxygen.
3. The method of producing a needle-like diamond structure as set forth in claim 1 , wherein said plasma etching treatment is conducted in a gaseous atmosphere including an inert gas.
4. The method of producing a needle-like diamond structure as set forth in claim 3 , wherein said inert gas is argon.
5. The method of producing a needle-like diamond structure as set forth in claim 1 , wherein said substance resistant to plasma etching is a metal.
6. The method of producing a needle-like diamond structure as set forth in claim 1 , wherein said substance resistant to plasma etching is a metal oxide.
7. The method of producing a needle-like diamond structure as set forth in claim 1 , wherein said substance resistant to plasma etching is a metal nitride.
8. The method of producing a needle-like diamond structure as set forth in claim 1 , further comprising the step of:
removing said dots formed by said vapor depositing step.
9. The method of producing a needle-like diamond structure as set forth in claim 1 , wherein the step of removing said anodized alumina is performed by dissolving said anodized alumina using an alkaline solution or an acid solution.
10. The method of producing a needle-like diamond structure as set forth in claim 9 , wherein the solution used to dissolve said anodized alumina is a solution of sodium hydroxide.Cited by (0)
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