US6317363B1ExpiredUtility

Multi-state memory

99
Assignee: SANDISK CORPPriority: Jan 14, 1992Filed: Oct 13, 2000Granted: Nov 13, 2001
Est. expiryJan 14, 2012(expired)· nominal 20-yr term from priority
H10D 30/6892H10D 30/6891H10D 30/685G11C 16/0425G11C 16/0441G11C 29/76G11C 16/28G11C 11/5642G11C 16/349G11C 16/3418G11C 27/005G11C 11/5635G11C 29/00G11C 16/3427G11C 2211/5634G11C 11/5621G11C 16/3495G11C 11/5628H10B 69/00
99
PatentIndex Score
160
Cited by
107
References
2
Claims

Abstract

Maximized multi-state compaction and more tolerance in memory state behavior is achieved through a flexible, self-consistent and self-adapting mode of detection, covering a wide dynamic range. For high density multi-state encoding, this approach borders on full analog treatment, dictating analog techniques including A to D type conversion to reconstruct and process the data. In accordance with the teachings of this invention, the memory array is read with high fidelity, not to provide actual final digital data, but rather to provide raw data accurately reflecting the analog storage state, which information is sent to a memory controller for analysis and detection of the actual final digital data.

Claims

exact text as granted — not AI-modified
What is claimed is:  
     
       1. A multi-state memory comprising: 
       a plurality of EEPROM memory cells, each for storing one of a plurality of multi-states, organized into a plurality of sectors;  
       one or more tracking cells for each of said multi-states, associated with each of said plurality of sectors;  
       read circuitry for reading raw data associated with the programmed state of said tracking cells;  
       converter circuitry for converting said raw data to digital form; and  
       a memory controller for establishing desired read points for each of a plurality of physical states, based upon said raw data converted to digital form read from each said tracking cell.  
     
     
       2. A multi-state memory comprising: 
       a plurality of EEPROM memory cells, each for storing one of a plurality of multi-states, organized into a plurality of sectors;  
       one or more tracking cells for each of said multi-states, associated with each of said plurality of sectors;  
       read circuitry for reading raw data associated with the programmed state of said tracking cells;  
       converter circuitry for converting said raw data to digital form; and  
       a memory controller for establishing desired read points for each of a plurality of physical states, based upon said raw data converted to digital form read from each said tracking cell.

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