Method for improving performance and reliability of MOS technologies and data retention characteristics of flash memory cells

Abstract

A method of fabricating a semiconductor device wherein there is provided a semiconductor substrate, preferably of silicon, having a gate insulator thereover, preferably of silicon dioxide, forming a junction, preferably a silicon/silicon dioxide interface, and a gate electrode, preferably of doped polysilicon, over the partially fabricated device. Deuterium is implanted into the structure and the deuterium is caused to diffuse through the device. The device fabrication is then completed.

What is claimed is:  
     
       1. A method of fabricating a semiconductor device which comprises the steps of: 
       (a) providing a semiconductor substrate having a gate insulator thereover forming a junction with said semiconductor substrate and a gate electrode over said gate insulator and spaced from said semiconductor substrate;  
       (b) implanting deuterium into said semiconductor substrate;  
       (c) causing said deuterium to diffuse to said junction by heating to a temperature above the dissociation temperature of silicon and hydrogen and then cooling to below said dissociation temperature; and  
       (d) forming a first layer of metal over said semiconductor substrate.  
     
     
       2. The method of claim  1  wherein said gate insulator is silicon dioxide. 
     
     
       3. The method of claim  1  wherein said gate electrode is polysilicon. 
     
     
       4. The method of claim  2  wherein said gate electrode is polysilicon. 
     
     
       5. A method of fabricating a semiconductor device which comprises the steps of: 
       (a) providing a semiconductor substrate having a gate insulator thereover forming a first junction with said semiconductor substrate and a gate electrode over said gate insulator forming a second junction with said gate insulator and said gate electrode and spaced from said semiconductor substrate;  
       (b) implanting deuterium into said gate insulator;  
       (c) causing said deuterium to diffuse to said second junction by heating to a temperature above the dissociation temperature of silicon and hydrogen and then cooling to below said dissociation temperature; and  
       (d) forming a first layer of metal over said semiconductor substrate.  
     
     
       6. The method of claim  5  wherein said gate insulator is silicon dioxide. 
     
     
       7. The method of claim  5  wherein said gate electrode is polysilicon. 
     
     
       8. The method of claim  6  wherein said gate electrode is polysilicon. 
     
     
       9. A method of fabricating a semiconductor device which comprises the steps of: 
       (a) providing a semiconductor substrate having a gate insulator thereover forming a first junction with said semiconductor substrate and a gate electrode over said gate insulator forming a second junction with said gate insulator and said gate electrode and spaced from said semiconductor substrate;  
       (b) implanting deuterium into said gate electrode;  
       (c) causing said deuterium to diffuse to said second junction by heating to a temperature above the dissociation temperature of silicon and hydrogen and then cooling to below said dissociation temperature; and  
       (d) forming a first layer of metal over said semiconductor substrate.  
     
     
       10. The method of claim  9  wherein said gate insulator is silicon dioxide. 
     
     
       11. The method of claim  9  wherein said gate electrode is polysilicon. 
     
     
       12. The method of claim  10  wherein said gate electrode is polysilicon. 
     
     
       13. A method of fabricating a semiconductor device which comprises the steps of: 
       (a) providing a semiconductor substrate having a gate insulator thereover forming a first junction with said semiconductor substrate and a gate electrode over said gate insulator forming a second junction with said gate insulator and said gate electrode and spaced from said semiconductor substrate and a sidewall contacting said first and second junctions;  
       (b) implanting deuterium into said sidewall;  
       (c) causing said deuterium to diffuse to at least one of said first and said second junctions by heating to a temperature above the dissociation temperature of silicon and hydrogen and then cooling to below said dissociation temperature; and  
       (d) forming a first layer of metal over said semiconductor substrate.  
     
     
       14. The method of claim  13  wherein said gate insulator is silicon dioxide. 
     
     
       15. The method of claim  13  wherein said gate electrode is polysilicon. 
     
     
       16. The method of claim  14  wherein said gate electrode is polysilicon. 
     
     
       17. A method of fabricating a semiconductor device which comprises the steps of: 
       (a) providing a semiconductor substrate having a gate insulator thereover forming a first junction with said semiconductor substrate and a gate electrode over said gate insulator forming a second junction with said gate insulator and said gate electrode and spaced from said semiconductor substrate and a sidewall contacting said first and second junctions;  
       (b) implanting deuterium into said sidewall;  
       (c) causing said deuterium to diffuse from said sidewall to at least one of said first and said second junctions; and  
       (d) forming a first layer of metal over said semiconductor substrate.  
     
     
       18. The method of claim  17  wherein said gate insulator is silicon dioxide. 
     
     
       19. The method of claim  17  wherein said gate electrode is polysilicon. 
     
     
       20. The method of claim  18  wherein said gate electrode is polysilicon.