Compound gas injection system

Abstract

A reaction assembly of a vapor-phase deposition system includes a reaction chamber leading to a gullet outlet, and a sheath leading to a sheath outlet. The gullet outlet and the sheath outlet at the distal end of the reaction assembly, the distal end including a compound nozzle. The reaction assembly generates a compound gas stream for projection from the compound nozzle towards a target substrate. The compound gas stream includes a reagent gas stream and a sheath gas stream, wherein the sheath gas stream at least partially envelopes the reagent gas stream. Methods for generating and delivering a compound gas stream, and for performing vapor-phase deposition, are also disclosed.

What is claimed is:  
     
       1. A reaction assembly for generating a reagent gas, comprising: 
       a sheath, a reaction chamber adjacent said sheath, a sheath inlet leading to said sheath, a gullet inlet leading to said reaction chamber, a sheath outlet leading from said sheath, and a gullet outlet leading from said reaction chamber, wherein said reaction assembly is adapted for operating at temperatures in the range of from about 200° C. to about 1000° C., and said reaction chamber is adapted for containing molten metal at a temperature in the range of from about 400° C. to about 1000° C.  
     
     
       2. A system for vapor-phase deposition of a material on a substrate, comprising: 
       a) a growth chamber including a growth chamber inlet, said growth chamber adapted for housing the substrate; and  
       b) a reaction assembly including a sheath, a reaction chamber adjacent said sheath, a sheath inlet leading to said sheath, a gullet inlet leading to said reaction chamber, a sheath outlet leading from said sheath, and a gullet outlet leading from said reaction chamber.  
     
     
       3. The system of  claim 2 , wherein said reaction assembly is adapted for providing a compound gas stream comprising a stream of reagent gas and a stream of sheath gas. 
     
     
       4. The system of  claim 3 , wherein the sheath gas at least partially envelopes the reagent gas. 
     
     
       5. The system of  claim 2 , wherein said sheath outlet encircles said gullet outlet. 
     
     
       6. The system of  claim 2 , wherein said sheath outlet is coaxial with said gullet outlet. 
     
     
       7. The system of  claim 2 , wherein said reaction assembly is disposed within said growth chamber. 
     
     
       8. The system of  claim 2 , wherein said reaction assembly includes a proximal end, said sheath inlet and said gullet inlet located at said proximal end, and said proximal end is sealed and engaged with said growth chamber inlet. 
     
     
       9. The system of  claim 2 , wherein said reaction assembly includes a distal end, said distal end including a compound nozzle.