Semiconductor device

Abstract

A method of manufacturing a semiconductor device including the steps of (a) forming an element isolation insulating film in an element isolation region of a SOI substrate of a stacked structure in which a semiconductor substrate, insulating layer, and semiconductor layer are stacked in this order, and (b) forming, in an element formation region of the SOI substrate, a transistor having a channel formation region selectively disposed in a main surface of the semiconductor layer, a gate structure on the channel formation region, and source/drain regions disposed is the main surface of the semiconductor layer and the adjacent channel formation region. The method also includes the step of (c) selectively growing, after said steps (a) and (b), a polycrystal semiconductor layer on the source/drain regions in a self-aligned manner, which is prescribed by the element isolation insulating film and the gate structure.

What is claimed is:  
     
       1. A method of manufacturing a semiconductor device comprising the steps of: 
       (a) forming an element isolation insulating film in an element isolation region of a SOI substrate of a stacked structure in which a semiconductor substrate, insulating layer, and semiconductor layer are stacked in this order;  
       (b) forming, in an element formation region of said SOI substrate, a transistor having a channel formation region selectively disposed in a main surface of said semiconductor layer, a gate structure on said channel formation region, and source/drain regions disposed in said main surface of said semiconductor layer and adjacent said channel formation region; and  
       (c) selectively growing, after said steps (a) and (b), a polycrystal semiconductor layer on said source/drain regions in a self-aligned manner, by means of said element isolation insulating film and said gate structure.