US6399510B1ExpiredUtility

Bi-directional processing chamber and method for bi-directional processing of semiconductor substrates

87
Assignee: APPLIED MATERIALS INCPriority: Sep 12, 2000Filed: Sep 12, 2000Granted: Jun 4, 2002
Est. expirySep 12, 2020(expired)· nominal 20-yr term from priority
Inventors:Norma RileyRoger N. AndersonGrant D. ImperPaul B. Comita
H10P 72/0421C23C 16/45502C23C 16/455
87
PatentIndex Score
48
Cited by
4
References
28
Claims

Abstract

A semiconductor substrate processing chamber provides a bi-directional process gas flow for deposition or etching processes. The bi-directional gas flow provides uniformity of deposition layer thickness or uniformity of etching without the need to rotate the substrate. Junctions are provided at opposite ends of a processing chamber. Inlet and outlet ports are provided on each junction. Inlet and outlet ports on opposite junctions cooperate to provide a gas flow in a first direction for half of the process cycle, and in a second direction for the other half of the process cycle.

Claims

exact text as granted — not AI-modified
What is claimed is:  
     
       1. A semiconductor substrate processing chamber comprising: an enclosure having a first junction and a second junction; a first gas inlet port at said first junction; a first gas outlet port at said second junction; a second gas inlet port at said second junction; and a second gas outlet port at said first junction. 
     
     
       2. The chamber of  claim 1  wherein said first gas inlet port and said first gas outlet port cooperate to provide gas flow in a first direction. 
     
     
       3. The chamber of  claim 2  wherein said gas flow in said first direction is maintained for about one-half of a gas process cycle. 
     
     
       4. The chamber of  claim 2  wherein said second gas inlet port and said second gas outlet port cooperate to provide gas flow in a second direction. 
     
     
       5. The chamber of  claim 4  wherein said gas flow in said first direction is maintained for about one-half of a gas process cycle, and said gas flow in said second direction is maintained for the remainder of said process cycle. 
     
     
       6. A semiconductor substrate processing chamber comprising: a first gas inlet port cooperating with a first gas outlet port; a second gas inlet port cooperating with a second gas outlet port; and a substrate platform positioned within said chamber to receive a substrate to be processed, wherein said first and second inlet ports and said first and second outlet ports, respectively, cooperate to provide bi-directional gas flow with respect to said substrate platform. 
     
     
       7. The chamber of  claim 6  wherein said first gas inlet port and said first gas outlet port cooperate to provide gas flow in a first direction with respect to said substrate platform, and said second gas inlet port and said second gas outlet port cooperate to provide gas flow in a second direction with respect to said substrate platform. 
     
     
       8. The chamber of  claim 7  wherein said first direction is opposite said second direction. 
     
     
       9. The chamber of  claim 6  wherein said first gas inlet port and said first gas outlet port cooperate to provide gas flow in a first direction. 
     
     
       10. The chamber of  claim 9  wherein said gas flow in said first direction is maintained for about one-half of a gas process cycle. 
     
     
       11. The chamber of  claim 9  wherein said second gas inlet port and said second gas outlet port cooperate to provide gas flow in a second direction. 
     
     
       12. The chamber of  claim 11  wherein said gas flow in said first direction is maintained for about one-half of a gas process cycle, and said gas flow in said second direction is maintained for the remainder of said process cycle. 
     
     
       13. A semiconductor substrate processing chamber comprising: a first gas inlet port and a first gas outlet port; a second gas inlet port and a second gas outlet port; said first gas inlet port and said first gas outlet port cooperating to provide a gas flow in a first direction; and said second gas inlet port and said second gas outlet port cooperating to provide a gas flow in a second direction that is opposite said first direction. 
     
     
       14. The chamber of  claim 13  wherein said gas flow in each of said first and second directions is provided for about one-half of a gas process cycle. 
     
     
       15. The chamber of  claim 14  further comprising a substrate holder that is stationary during said gas process cycle. 
     
     
       16. A semiconductor substrate processing chamber comprising: a first gas inlet port cooperating with a first gas outlet port; a second gas inlet port cooperating with a second gas outlet port, wherein said first gas inlet port is adjacent said second gas outlet port and said second gas inlet port is adjacent said first gas outlet port; a first door covering one of said first gas inlet port and said second gas outlet port; a second door covering one of said second gas inlet port and said first gas outlet port; and a substrate platform positioned within said chamber to receive a substrate to be processed, herein aid first and second inlet ports and said first and second outlet ports, respectively, cooperate to provide bi-directional gas flow with respect to said substrate platform. 
     
     
       17. The chamber of  claim 16  wherein said first door covers said first gas inlet port when said second door covers said first gas outlet port. 
     
     
       18. The chamber of  claim 17  wherein said second door covers said second gas inlet port when said first door covers said second gas outlet port. 
     
     
       19. A method for bi-directional processing of a semiconductor substrate, the method comprising: loading a semiconductor substrate into a processing chamber, the processing chamber including a first gas inlet port, a second gas inlet port, a first gas outlet port, and a second gas outlet port; injecting a process gas through said chamber from said first gas inlet port for a first portion of a processing cycle; and injecting said process gas through said chamber from said second gas inlet port for a second portion of a processing cycle. 
     
     
       20. The method of  claim 19  further comprising exhausting said process gas through said first gas outlet port during said first portion of said processing cycle, said first gas inlet port and said first gas outlet port cooperating to provide gas flow in a first direction relative to said substrate. 
     
     
       21. The method of  claim 20  further comprising exhausting said process gas through said second gas outlet port during said second portion of said processing cycle, said second gas inlet port and said second gas outlet port cooperating to provide gas flow in a second direction relative to said substrate. 
     
     
       22. The method of  claim 21  wherein said first direction is generally parallel to and opposite said second direction. 
     
     
       23. The method of  claim 20  wherein said first portion of said processing cycle is equal in time to said second portion of said processing cycle. 
     
     
       24. The method of  claim 20  wherein said first portion of said processing cycle is about one-half of said processing cycle and said second portion of said processing cycle is the remainder of said processing cycle. 
     
     
       25. The method of  claim 20  further comprising dosing said second gas inlet port and said second gas outlet port during said first portion of said processing cycle, and dosing said first gas inlet port and said first gas outlet port during said second portion of said processing cycle. 
     
     
       26. The method of  claim 20  further comprising injecting a partial flow of process gas from said second gas inlet port during said first portion of said processing cycle and injecting a partial flow of process gas from said first gas inlet port during said second portion of said processing cycle. 
     
     
       27. The method of  claim 20  further comprising exhausting a partial flow of process gas through said second gas outlet port during said first portion of said processing cycle and exhausting a partial flow of process gas through said first gas outlet port during said second portion of said processing cycle. 
     
     
       28. The method of  claim 20  wherein the substrate is stationary within said chamber during said processing cycle.

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