US6448155B1ExpiredUtility

Production method of semiconductor base material and production method of solar cell

96
Assignee: CANON KKPriority: Jun 17, 1999Filed: Jun 12, 2000Granted: Sep 10, 2002
Est. expiryJun 17, 2019(expired)· nominal 20-yr term from priority
Inventors:Yukiko IwasakiTakao YoneharaShoji NishidaKiyofumi SakaguchiNoritaka Ukiyo
H10P 72/7434H10P 72/7416H10P 72/743H10W 10/181H10P 90/1924H10P 72/7402H10P 52/00H10P 72/74
96
PatentIndex Score
127
Cited by
12
References
36
Claims

Abstract

When a semiconductor layer formed via a separation layer on a substrate is supported by a support member and a pulling force is then exerted on the support member to mechanically break the separation layer to thereby form a thin-film semiconductor, the substrate is held by vacuum and/or electrostatic attachment and separation of the thin-film epitaxial layer is initiated from an area other than an edge of the substrate. This provides a method capable of obtaining the thin-film epitaxial layer with excellent characteristics in a good yield and permitting repetitive uses of the substrate, without inducing lifting of the substrate due to the separation force overcoming the attaching force of the substrate when producing a semiconductor base material and a solar cell.

Claims

exact text as granted — not AI-modified
What is claimed is:  
     
       1. A method of producing a semiconductor base material, the method comprising steps of supporting a semiconductor layer formed through a separation layer on a substrate by a support member, holding the substrate, and thereafter applying a pulling force to the support member to mechanically break the separation layer to form a thin-film semiconductor, wherein the pulling force applying step is effected such that separation is initiated from an area other than an edge of the substrate. 
     
     
       2. The method according to  claim 1 , wherein a thin-film semiconductor layer is separated while holding the substrate by vacuum attachment. 
     
     
       3. The method according to  claim 1 , wherein a thin-film semiconductor layer is separated while holding the substrate by electrostatic attachment. 
     
     
       4. The method according to  claim 1 , wherein a thin-film semiconductor layer is separated while holding the substrate by vacuum attachment and electrostatic attachment. 
     
     
       5. The method according to  claim 1 , wherein the separation layer is a porous layer formed by anodization. 
     
     
       6. The method according to  claim 1 , wherein the substrate is subjected to repetitive uses. 
     
     
       7. A method of producing a semiconductor base material, the method comprising steps of supporting a semiconductor layer formed through a separation layer on a substrate by a support member, holding the substrate, and thereafter applying a pulling force to the support member to mechanically break the separation layer to form a thin-film semiconductor, wherein the pulling force applying step is effected such that separation is initiated from a position where a force of holding the substrate is greater than the force of pulling the support member. 
     
     
       8. The method according to  claim 7 , wherein a thin-film semiconductor layer is separated while holding the substrate by vacuum attachment. 
     
     
       9. The method according to  claim 7 , wherein a thin-film semiconductor layer is separated while holding the substrate by electrostatic attachment. 
     
     
       10. The method according to  claim 7 , wherein a thin-film semiconductor layer is separated while holding the substrate by vacuum attachment and electrostatic attachment. 
     
     
       11. The method according to  claim 7 , wherein the separation layer is a porous layer formed by anodization. 
     
     
       12. The method according to  claim 7 , wherein the substrate is subjected to repetitive uses. 
     
     
       13. A method of producing a semiconductor base material, the method comprising steps of supporting a semiconductor layer formed through a separation layer on a substrate by a support member, holding the substrate, and thereafter applying a pulling force to the support member to mechanically break the separation layer to form a thin-film semiconductor, wherein a groove is formed by removing the semiconductor layer and the porous layer so as to make at least a predetermined angle relative to a separation-proceeding direction and the pulling force applying step is effected such that separation is initiated from the groove. 
     
     
       14. The method according to  claim 13 , wherein a thin-film semiconductor layer is separated while holding the substrate by vacuum attachment. 
     
     
       15. The method according to  claim 13 , wherein a thin-film semiconductor layer is separated while holding the substrate by electrostatic attachment. 
     
     
       16. The method according to  claim 13 , wherein a thin-film semiconductor layer is separated while holding the substrate by vacuum attachment and electrostatic attachment. 
     
     
       17. The method according to  claim 13 , wherein the separation layer is a porous layer formed by anodization. 
     
     
       18. The method according to  claim 13 , wherein the substrate is subjected to repetitive uses. 
     
     
       19. A method of producing a solar cell, the method comprising steps of supporting a semiconductor layer formed through a separation layer on a substrate by a support member, holding the substrate, and thereafter applying a pulling force to the support member to mechanically break the separation layer to form a thin-film semiconductor, wherein the pulling force applying step is effected such that separation is initiated from an area other than an edge of the substrate. 
     
     
       20. The method according to  claim 19 , wherein a thin-film semiconductor layer is separated while holding the substrate by vacuum attachment. 
     
     
       21. The method according to  claim 19 , wherein a thin-film semiconductor layer is separated while holding the substrate by electrostatic attachment. 
     
     
       22. The method according to  claim 19 , wherein a thin-film semiconductor layer is separated while holding the substrate by vacuum attachment and electrostatic attachment. 
     
     
       23. The method according to  claim 19 , wherein the separation layer is a porous layer formed by anodization. 
     
     
       24. The method according to  claim 19 , wherein the substrate is subjected to repetitive uses. 
     
     
       25. A method of producing a solar cell, the method comprising steps of supporting a semiconductor layer formed through a separation layer on a substrate by a support member, holding the substrate, and thereafter applying a pulling force to the support member to mechanically break the separation layer to form a thin-film semiconductor, wherein the pulling force applying step is effected such that separation is initiated from a position where a force of holding the substrate is greater than the force of pulling the support member. 
     
     
       26. The method according to  claim 25 , wherein a thin-film semiconductor layer is separated while holding the substrate by vacuum attachment. 
     
     
       27. The method according to  claim 25 , wherein a thin-film semiconductor layer is separated while holding the substrate by electrostatic attachment. 
     
     
       28. The method according to  claim 25 , wherein a thin-film semiconductor layer is separated while holding the substrate by vacuum attachment and electrostatic attachment. 
     
     
       29. The method according to  claim 25 , wherein the separation layer is a porous layer formed by anodization. 
     
     
       30. The method according to  claim 25 , wherein the substrate is subjected to repetitive uses. 
     
     
       31. A method of producing a solar cell, the method comprising steps of supporting a semiconductor layer formed through a separation layer on a substrate by a support member, holding the substrate, and thereafter applying a pulling force to the support member to mechanically break the separation layer to form a thin-film semiconductor, wherein a groove is formed by removing the semiconductor layer and the porous layer so as to make at least a predetermined angle relative to a separation-proceeding direction and the pulling force applying step is effected such that separation is initiated from the groove. 
     
     
       32. The method according to  claim 31 , wherein a thin-film semiconductor layer is separated while holding the substrate by vacuum attachment. 
     
     
       33. The method according to  claim 31 , wherein a thin-film semiconductor layer is separated while holding the substrate by electrostatic attachment. 
     
     
       34. The method according to  claim 31 , wherein a thin-film semiconductor layer is separated while holding the substrate by vacuum attachment and electrostatic attachment. 
     
     
       35. The method according to  claim 31 , wherein the separation layer is a porous layer formed by anodization. 
     
     
       36. The method according to  claim 31 , wherein the substrate is subjected to repetitive uses.

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