Epitaxial compound structure and device comprising same

Abstract

An epitaxial compound structure has a crystal structure including fluorite crystal on which is epitaxially grown a film of simple perovskite crystal with a (011) orientation.

What is claimed is:  
     
       1. An epitaxial compound structure, comprising a (001)-oriented film of fluorite crystal, and a (011)-oriented film of simple perovskite crystal grown epitaxially on said film of fluorite crystal. 
     
     
       2. An epitaxial compound structure according to  claim 1 , wherein said film of fluorite crystal is (001)-oriented film epitaxially grown on a conductive crystal. 
     
     
       3. An epitaxial compound structure according to  claim 2 , wherein said conductive crystal is silicon. 
     
     
       4. An epitaxial compound structure, comprising a (001)-oriented film of fluorite crystal, a (011)-oriented film of simple perovskite type crystal grown epitaxially on said film of fluorite crystal, and a crystal film having a layered perovskite crystal structure grown epitaxially on said film of simple perovskite crystal. 
     
     
       5. An epitaxial compound structure according to  claim 4 , wherein said film of fluorite crystal is a (001)-oriented film epitaxially grown on a conductive crystal. 
     
     
       6. An epitaxial compound structure according to  claim 5 , wherein said conductive crystal is silicon. 
     
     
       7. An epitaxial compound structure according to  claim 4 , wherein said crystal film having a layered perovskite crystal structure is a ferroelectric material. 
     
     
       8. An epitaxial compound structure according to  claim 5 , wherein said crystal film having a layered perovskite crystal structure is a ferroelectric material. 
     
     
       9. An epitaxial compound structure according to  claim 6 , wherein said crystal film having a layered perovskite crystal structure is a ferroelectric material. 
     
     
       10. An epitaxial compound structure according to  claim 4 , wherein said crystal film having a layered perovskite crystal structure is a superconducting material. 
     
     
       11. An epitaxial compound structure according to  claim 5 , wherein said crystal film having a layered perovskite crystal structure is a superconducting material. 
     
     
       12. An epitaxial compound structure according to  claim 6 , wherein said crystal film having a layered perovskite crystal structure is a superconducting material. 
     
     
       13. An epitaxial compound structure according to  claim 4 , wherein said crystal film having a layered perovskite crystal structure is a magnetic material. 
     
     
       14. An epitaxial compound structure according to  claim 5 , wherein said crystal film having a layered perovskite crystal structure is a magnetic material. 
     
     
       15. An epitaxial compound structure according to  claim 6 , wherein said crystal film having a layered perovskite crystal structure is a magnetic material. 
     
     
       16. A ferroelectric device, comprised of the compound structure of  claim 7 . 
     
     
       17. A ferroelectric device, comprised of the compound structure of  claim 8 . 
     
     
       18. A ferroelectric device, comprised of the compound structure of  claim 9 . 
     
     
       19. A superconducting device, comprised of the compound structure of  claim 10 . 
     
     
       20. A superconducting device, comprised of the compound structure of  claim 11 . 
     
     
       21. A superconducting device, comprised of the compound structure of  claim 12 .