Semiconductor device and method and apparatus for manufacturing semiconductor device

Abstract

Provided is a method and apparatus for the production of a semiconductor device, the method and the apparatus producing a high quality and highly functional semiconductor device efficiently at low temperatures in a short time and also a high quality and highly functional semiconductor device produced by the method and apparatus. The semiconductor device is produced by forming a film of a nitride compound on a substrate having heat resistance at 600° C. or less, wherein the nitride compound includes one or more elements selected from group IIIA elements of the periodic table and a nitrogen atom and produces photoluminescence at the band edges at room temperature. The method for producing a semiconductor device comprises introducing an organic metal compound containing one or more elements selected from group IIIA elements of the periodic table intermittently in an activated environment, while continuously activating a nitrogen compound, to form a film of a nitride compound containing nitrogen and the group IIIA elements on a substrate.

What is claimed is:  
     
       1. A method for producing a semiconductor device, the method comprising continuously activating a nitrogen compound while introducing an organic metal compound containing one or more elements selected from IIIA elements of the periodic table intermittently in the activated environment, to form a film of a nitride compound containing nitrogen and said group IIIA elements on a substrate, and wherein the activating comprises glow discharge using radio frequency and/or glow discharge using microwave. 
     
     
       2. A method for producing a semiconductor device according to  claim 1 , wherein hydrogen or a compound containing hydrogen is further added to said activated environment. 
     
     
       3. A method for producing a semiconductor device according to  claim 1 , wherein said organic metal compound comprises two or more organic metal compounds containing different group IIIA elements and said nitride compound is a mixed crystal of two or more semiconductor compounds. 
     
     
       4. A method for producing a semiconductor device according to  claim 3 , wherein said two or more organic metal compounds are introduced intermittently at the same time. 
     
     
       5. A method for producing a semiconductor device according to  claim 3 , wherein said two or more organic metal compounds are introduced intermittently so as not to overlap each other in time. 
     
     
       6. A method for producing a semiconductor device according to  claim 1 , wherein a raw material for pn control is further added to said activated environment. 
     
     
       7. A method for producing a semiconductor device according to  claim 1 , wherein the temperature at which the film is formed on said substrate is 600° C. or less. 
     
     
       8. A method for producing a semiconductor device, the method comprising continuously activating a nitrogen compound, continuously and separately activating an assistance material which is different from said nitrogen compound simultaneously and introducing an organic metal compound containing one or more elements selected from group IIIA elements of the periodic table intermittently in the environment in which the assistance material is activated, to form a film of a nitride compound containing nitrogen and said group IIIA elements on a substrate, wherein the activating of the nitrogen compound and the activating of the assistance material comprises glow discharge using radio frequency and/or glow discharge using microwave.