US6582984B2ExpiredUtilityA1

Method for fabricating an organic light emitting diode

50
Assignee: HELIX TECHNOLOGY INCPriority: Nov 7, 2000Filed: Mar 13, 2001Granted: Jun 24, 2003
Est. expiryNov 7, 2020(expired)· nominal 20-yr term from priority
Inventors:Kuang-Chung Peng
H10K 59/80H10K 59/17H10K 59/173H10K 50/80H10K 71/00H10K 2102/351
50
PatentIndex Score
2
Cited by
9
References
14
Claims

Abstract

A method for fabricating an organic light emitting diode. The method uses a mask to create an anode position by etching on a substrate and forming a plural groove in the substrate. Next, the anode is formed on the bottom of the groove. A dot-matrix type mask is used to form the organic emitting layer over the anode and under a predetermined cathode position. A hole injection layer, hole transport layer and an electron transport layer are formed inside the groove. More particularly, the total thickness of the anode, the organic emitting layer, the hole injection layer, the hole transport layer and the electron transport layer is equal to the depth of the groove to provide a smooth surface of the substrate. Finally, another mask is utilized on the substrate to form a strip shaped cathode, thus completing the fabrication of the organic light emitting diode.

Claims

exact text as granted — not AI-modified
What is claimed is:  
     
       1. A method for fabricating an organic light emitting diode, comprising: 
       providing a substrate;  
       forming a plurality of grooves in the substrate;  
       forming an anode on a bottom of the grooves;  
       forming an organic emitting layer over the anode; and  
       forming a plurality of cathodes over the substrate.  
     
     
       2. The method as claimed in  claim 1 , wherein the method for fabricating the groove comprises using a mask to etch the substrate by plasma dry etching. 
     
     
       3. The method as claimed in  claim 1 , wherein the method for fabricating the groove comprises using a mask to etch the substrate by laser carving. 
     
     
       4. The method as claimed in  claim 1 , wherein a total thickness of the anode and the organic emitting layer formed in the groove is equal to the depth of the groove. 
     
     
       5. The method as claimed in  claim 1 , wherein the method for fabricating the organic emitting layer comprises using a dot-matrix type metal mask to form the organic emitting layer that determines the position of the cathode. 
     
     
       6. The method as claimed in  claim 1 , wherein a hole injection layer and a hole transport layer are formed between the organic emitting layer and the anode. 
     
     
       7. The method as claimed in  claim 6 , wherein each the thickness of the hole injection layer and the hole transport layer is approximately 300 Ř700 Å. 
     
     
       8. The method as claimed in  claim 1 , wherein an electron transport layer also is formed between the organic emitting layer and the cathode strips. 
     
     
       9. The method as claimed in  claim 8 , wherein the thickness of the electron transport layer is approximately 300 Ř700 Å. 
     
     
       10. The method as claimed in  claim 1 , wherein the thickness of the organic emitting layer is approximately 450 Ř950 Å. 
     
     
       11. The method as claimed in  claim 1 , wherein the material of the substrate is either glass or plastic. 
     
     
       12. The method as claimed in  claim 1 , wherein the material of the anode is indium-tin-oxide (ITO). 
     
     
       13. The method as claimed in  claim 1 , wherein the thickness of the anode is approximately 1500 Ř2500 Å. 
     
     
       14. The method as claimed in  claim 1 , wherein the method for fabricating the cathode uses a mask formed over the substrate and to form the cathode strips.

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