P
US6714401B2ExpiredUtilityPatentIndex 63

Thin film, method and apparatus for forming the same, and electronic component incorporating the same

Assignee: MATSUSHITA ELECTRIC INDUSTRIAL CO LTDPriority: May 21, 1996Filed: Mar 4, 2003Granted: Mar 30, 2004
Est. expiryMay 21, 2016(expired)· nominal 20-yr term from priority
Inventors:HONDA KAZUYOSHIODAGIRI MASARUTAKAHASHI KIYOSHIECHIGO NORIYASUSUNAGARE NOBUKI
C23C 14/246B05B 17/04G11B 5/85C23C 14/562B05D 1/60B05B 17/06C23C 14/56C23C 14/26
63
PatentIndex Score
2
Cited by
30
References
10
Claims

Abstract

A method for forming a thin film includes the steps of: supplying a deposition material in the form of a liquid onto a heated surface; heating and vaporizing the deposition material on the heated surface while the deposition material is undergoing movement; and depositing the deposition material onto a deposition surface. The deposition material is supplied onto a position of the heated surface where the vaporized deposition material does not reach the deposition surface.

Claims

exact text as granted — not AI-modified
What is claimed is:  
     
       1. A thin film including an interface between a resin thin film and a metal thin film which are laminated, a concentration of oxygen in the vicinity of the interface between the resin thin film and the metal thin film is higher than a concentration of oxygen in a middle portion of the resin thin film in its thickness direction. 
     
     
       2. A thin film according to  claim 1 , wherein the concentration of oxygen in the vicinity of the interface is about 1.3 times or more the concentration of oxygen in a middle portion of the resin thin film in its thickness direction. 
     
     
       3. A thin film according to  claim 1 , wherein the resin thin film contains at least one acrylate monomer. 
     
     
       4. A thin film according to  claim 1 , wherein the resin thin film and the metal thin film are alternately laminated. 
     
     
       5. An electronic component having a thin film according to  claim 4 . 
     
     
       6. An electronic component according to  claim 5 , wherein the thickness of the metal thin film is in a range of about 50 nm to about 2000 nm, and the thickness of the resin thin film is in a range of about 0.05 to about 3 μm. 
     
     
       7. An electronic component according to  claim 6 , wherein a metal thin film is a strip-like thin film. 
     
     
       8. An electronic component according to  claim 6 , wherein the metal thin film comprises a layer made of different metal materials. 
     
     
       9. An electronic component according to  claim 7 , wherein the thickness of the metal thin film is in a range of about 15 to about 100 nm, and a thickness of a resin thin film is in a range of about 0.05 μm to about 1 μm. 
     
     
       10. A capacitor according to  claim 9 , wherein an outer-most layer of the resin thin film is thicker than the other resin thin film layers.

Cited by (0)

No later patents cite this yet.

References (0)

No backward citations on record.