US6825891B2ExpiredUtilityA1

Electro-optical device having storage capacitor laminated between data line and pixel electrode

84
Assignee: SEIKO EPSON CORPPriority: Apr 21, 2000Filed: Oct 8, 2003Granted: Nov 30, 2004
Est. expiryApr 21, 2020(expired)· nominal 20-yr term from priority
G02F 1/136227G02F 1/136209G09G 2300/0426G09G 2300/0842G02F 1/1345G02F 1/136213G09G 3/3225G09G 2320/0233G09G 2320/0214G02F 1/1368H10D 30/67G02F 2201/123G02F 1/1362G02F 1/136286
84
PatentIndex Score
22
Cited by
18
References
7
Claims

Abstract

The present invention provides electro-optical device that can include, on a TFT array substrate, pixel electrodes, TFTs for switching the respective pixel electrodes, and scanning lines and data lines respectively connected to the TFTs. By laminating a capacitive electrode and a capacitive line with an interlayer insulator interposed therebetween, a storage capacitor can be formed in a region overlapping the scanning line in a plan view. This arrangement increases a pixel aperture ratio and the capacitance of the storage capacitor, thereby reducing cross-talk and ghost and presenting a high-quality image display.

Claims

exact text as granted — not AI-modified
What is claimed is:  
     
       1. An electro-optical device, comprising, above a substrate: 
       scanning lines and data lines that intersect with each other to form a grid like pattern;  
       thin-film transistors, each of the thin film transistors being disposed in correspondence with intersections of one of the scanning lines and one of the data lines;  
       pixel electrodes respectively being disposed in correspondence with the thin-film transistors;  
       a first light shielding film laminated between the data line and the pixel electrode; and  
       a storage capacitor including the first light shielding film and a capacitive electrode of pixel-electrode potential, laminated between the data line and the pixel electrode.  
     
     
       2. The electro-optical device according to  claim 1 , the thin-film transistor having a channel region which is formed in an intersection portion of the scanning line and the data line. 
     
     
       3. The electro-optical device according to  claim 1 , the capacitive electrode being electrically connected to a semiconductor layer of the thin film transistor via a barrier layer formed of the same film as the data line. 
     
     
       4. The electro-optical device according to  claim 3 , the barrier layer being formed along the data line and the scanning line. 
     
     
       5. An electronic apparatus comprising an electro-optical device according to  claim 1 . 
     
     
       6. An electro-optical device, comprising, above a substrate: 
       scanning lines and data lines that intersect with each other to form a grid-like pattern;  
       thin-film transistors, each of the thin-film transistors being disposed in correspondence with intersections of one of the scanning lines and one of the data lines;  
       pixel electrodes respectively being disposed in correspondence with the thin-film transistors;  
       a first light shielding film laminated between the data line and the pixel electrode,  
       the first light shielding film being formed alone the data line and the scanning line; and  
       a storage capacitor including the first light shielding film, laminated between the data line and the pixel electrode.  
     
     
       7. The electro-optical device according to  claim 6 , the first light shielding film being formed in a grid configuration.

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