Liquid crystal display device and fabricating method thereof, and reworking method of alignment film using the same

Abstract

A liquid crystal display device includes a substrate, an organic insulating film formed on the substrate, an alignment film having a first etch rate formed on the organic insulating film, and a silicon nitride layer having a second etch rate formed between the alignment film and the organic insulating film, wherein the first etch rate is different from the second etch rate.

1. A method of fabricating a liquid crystal display device, comprising the steps of:
 forming an organic insulating film on a substrate;  
 forming an alignment film having a first etch rate on the organic insulating film; and  
 forming a silicon nitride layer having a second etch rate between the alignment film and the organic insulating film,  
 wherein the first etch rate is different from the second etch rate.  
 
     
     
       2. The method according to  claim 1 , further including eliminating the alignment film by dry-etching during rework processing. 
     
     
       3. The method according to  claim 2 , wherein the dry-etching is carried out by using at least one compound gas of SF 6 , O 2 +Cl 2 , and CF 4 . 
     
     
       4. The method according to  claim 3 , wherein a ratio of the compound gas is at least about SF 6 :O 2 =1:50. 
     
     
       5. The method according to  claim 3 , wherein a ratio of the compound gas is at least about SF 6 :O 2 =1:70. 
     
     
       6. The method according to  claim 3 , wherein the dry-etching uses a radio frequency power of about 500-1500 W. 
     
     
       7. The method according to  claim 1 , wherein the silicon nitride layer includes hydrogen. 
     
     
       8. The method according to  claim 1 , further including the steps of:
 forming a gate line and a gate electrode on the substrate;  
 forming a gate insulating film on the gate line, the gate electrode and the substrate;  
 forming a semiconductor layer on the gate insulating film; and  
 forming a data line, a source electrode and a drain electrode on the gate insulating film.  
 
     
     
       9. The method according to  claim 8 , further including the step of forming a pixel electrode on the silicon nitride layer to overlap at least one of the data line and the gate line.