US6852549B2ExpiredUtilityPatentIndex 47

Ferroelectric thin film processing for ferroelectric field-effect transistor

Assignee: UNIV NAT CHIAO TUNGPriority: May 28, 2002Filed: Oct 17, 2002Granted: Feb 8, 2005

Est. expiryMay 28, 2022(expired)· nominal 20-yr term from priority

Inventors:CHEN SAN-YUAN SUN CHIA-LIANG CHIN ALBERT

H10P 14/69398H10P 14/6342H10D 30/701C23C 18/1216H10D 64/033H10D 64/689C23C 18/1225

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Abstract

The present invention relates to a method for manufacturing a ferroelectric field-effect transistor, particularly to a ferroelectric field-effect transistor with a metal/ferroelectric/insulator/semiconductor (MFIS) gate capacitor structure. The method comprises steps of depositing a bismuth layered ferroelectric film on the insulator buffered Si, after a high-temperature thermal treatment, depositing an upper electrode on the bismuth layered ferroelectric film.

Claims

exact text as granted — not AI-modified

1. A method for manufacturing a semiconductor applied to a one-transistor ferroelectric memory device, comprising step of:
providing an aluminum oxide layer;
forming a bismuth ferroelectric film with bismuth layered perovskite structure on said aluminum oxide layer, wherein said bismuth is partially substituted by one of lanthanum and vanadium;
treating said aluminum oxide layer and said bismuth ferroelectric film at a high temperature; and
depositing a metal upper electrode layer on said bismuth ferroelectric film.

2. The method according to claim 1 , wherein said aluminum oxide layer is formed by means of sputtering.

3. The method according to claim 1 , wherein said aluminum oxide layer is formed by means of metalorganic chemical vapor deposition (MOCVD).

4. The method according to claim 1 , wherein said aluminum oxide layer is formed by means of electron beam evaporation and following oxidation process.

5. The method according to claim 1 , wherein said bismuth ferroelectric film comprises bismuth ion precursors, titanium ion precursors and one of lanthanum ion precursors and vanadium ion precursors.

6. The method according to claim 5 , wherein said bismuth ion precursors, titanium ion precursors and one selected from a group consisting of lanthanum ion precursors, vanadium ion precursors and the mixture thereof are at a molar ratio of (4−X):3:X (Bi 3+ :Ti 4+ :La 3+ /V 3+ ), wherein 0&lt;x&lt;1.9.

7. The method according to claim 1 , wherein said bismuth layered ferroelectric film is formed by means of spin coating of a chemical solution.

8. The method according to claim 7 , wherein said chemical solution is one selected from a group consisting of bismuth acetate, lanthanum acetate, titanium n-butodixe and the mixture thereof dissolving in a mixing solvent of acetic acid and 2-methoxyethanol.

9. The method according to claim 7 , wherein said chemical solution comprises a(n) metallo-organic precursor and an organic solvent.

10. The method according to claim 9 , wherein said metallo-organic precursor is one selected from a group of bismuth, lanthanum and titanium with carbon chains, respectively.

11. The method according to claim 1 , wherein said bismuth layered ferroelectric film is formed by means of sputtering.

12. The method according to claim 1 , wherein said bismuth layered ferroelectric film is formed by means of pulsed laser deposition (PLD).

13. The method according to claim 1 , wherein said bismuth layered ferroelectric film is formed by means of MOCVD.

14. The method according to claim 1 , wherein said high temperature is ranged from 600 to 1000° C.

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