Enabling chain scission of branched photoresist

Abstract

By using a branched long chained chain scission polymer as a photoresist for EUV and 157 nanometer applications, a relatively higher molecular weight polymer with good mechanical properties may be achieved. In addition, by using chain scission technology, line edge roughness and resolution may be improved at the same time.

1. A method comprising:
 forming a photoresist from a branched chain scission polymer.  
 
     
     
       2. The method of  claim 1  including providing scissionable linkages and nonscissionable linkages in said polymer. 
     
     
       3. The method of  claim 1  including providing a scissionable linkage in a branch of said polymer. 
     
     
       4. The method of  claim 1  including forming a photoresist including a polymer having a molecular weight greater than 10,000 Daltons. 
     
     
       5. The method of  claim 1  including forming a photoresist including a polymer having a branch having a molecular weight greater than 5000 Daltons. 
     
     
       6. The method of  claim 1  including forming a polymer including oligo-4-hydroxystyrene. 
     
     
       7. The method of  claim 6  including forming tertiary carbonated linked branches. 
     
     
       8. The method of  claim 6  including forming an oligo-1,4-dihydroxyphenylcarbonate-bis tertiary alcohol. 
     
     
       9. The method of  claim 8  including appending a tertiary alcohol carbonate side chain on said polymer.