TAB type semiconductor device

Abstract

There is disclosed a TAB style BGA type semiconductor device. This semiconductor device comprises a semiconductor chip on which an integrated circuit is formed, and a polyimide tape which has a conductive pattern and which is allowed to adhere to the semiconductor chip. The conductive pattern includes a bonding portion connected to the pad of the semiconductor chip, a pad portion connected to the outside electrode, and an electrically floating island-like portion in addition to a wiring portion for connecting the bonding portion and the pad portion.

1. A semiconductor devices comprising:
 a semiconductor chip including a main surface on which pads are formed, and a rear surface opposite to the main surface;  
 an insulating base comprising a main surface including a pad area and a peripheral area located outside the pad area, and a rear surface opposite to the main surface, the rear surface of the insulating base being adhered to the main surface of the semiconductor chip;  
 conductive patterns formed on the main surface of the insulating base, the conductive patterns including bonding portions, pad portions and wiring portions connecting the bonding portions and the pad portions, the bonding portions being arranged in the peripheral area, the pad portions being arranged in the pad area, the wiring portions being arranged in both the peripheral area and the pad area;  
 island-like patterns provided along the wiring portions of the peripheral area;  
 outside electrodes provided on the pad portions of the conductive patterns, the outside electrodes being provided on the main surface of the insulating base, and  
 a covering layer which covers those of the conductive patterns at least except the bonding portions and the pad portions,  
 wherein an area of one of the island-like patterns is larger than an area of one of the pad portions and an intersection angle between an edge of the covering layer and one of the bonding portions is more than 90 degrees.  
 
   
   
     2. The semiconductor device according to  claim 1 , wherein the peripheral area surrounds the pad area and the island-like patterns are arranged around the pad area. 
   
   
     3. The semiconductor device according to  claim 2 , wherein the pad area and the peripheral area are located above the semiconductor chip. 
   
   
     4. The semiconductor device according to  claim 3 , wherein the insulating base is a TAB tape. 
   
   
     5. The semiconductor device according to  claim 3 , wherein the island-like patterns are formed of the same conductive material as the conductive patterns. 
   
   
     6. The semiconductor device according to  claim 5 , wherein the conductive material has a Vikers hardness of at least 170 HV. 
   
   
     7. The semiconductor device according to  claim 3 , wherein the conductive patterns include an option pad portion provided in the peripheral area. 
   
   
     8. The semiconductor device according to  claim 3 , wherein the wiring portions each have a tend portion. 
   
   
     9. The semiconductor device according to  claim 8 , wherein the tend portion has a fin-like configuration. 
   
   
     10. The semiconductor device according to  claim 9 , wherein the tend portion extends between the wiring pattern and another wiring pattern. 
   
   
     11. The semiconductor device according to  claim 8 , wherein the tend portion is provided in the peripheral area. 
   
   
     12. The semiconductor device according to  claim 8 , wherein the tend portion is provided in the pad area. 
   
   
     13. The semiconductor device, according to  claim 3 , wherein the island-like portions each include at least one of a planar pattern, a stripe pattern, a checker pattern and a mesh pattern. 
   
   
     14. The semiconductor device according to  claim 3 , further comprising an additional island-like pattern provided along the pad portions of the pad area. 
   
   
     15. The semiconductor device according to  claim 1 , wherein the bonding portions are tapered such that the bonding portions are thinner toward tips of the bonding portions. 
   
   
     16. The semiconductor device according to  claim 1 , wherein the covering layer is a resist layer. 
   
   
     17. The semiconductor device according to  claim 16 , wherein the resist layer is a solder resist layer. 
   
   
     18. The semiconductor device according to  claim 1 , wherein the covering layer is formed by printing a resist. 
   
   
     19. The semiconductor device according to  claim 18 , wherein the resist is a solder resist.