Charge dissipation in electrostatically driven devices

Abstract

A charge-dissipation structure is formed within the dielectric of an electrostatically driven device, such as a micro-electro-mechanical systems (“MEMS”) device, by ion implantation. Electrical and other properties of the charge-dissipation structure may be controlled by selection of the species, energy, and dose of implanted ions. With appropriate properties, such a charge-dissipation structure can reduce the effect on device operation of mobile charges in or on the dielectric.

1. A product made by a method comprising forming a charge-dissipation structure in a device, wherein the device comprises:
 a dielectric;  
 at least one electrode disposed on a surface of a first portion of the dielectric, wherein the first portion and the at least one electrode form an electrode region of the device; and  
 the charge-dissipation structure formed in the electrode region and in a second portion of the dielectric located outside of the electrode region.  
 
     
     
       2. The invention of  claim 1 , wherein a part of the charge-dissipation structure is formed in the at least one electrode. 
     
     
       3. The invention of  claim 1 , wherein a part of the charge-dissipation structure is formed in the first portion of the dielectric. 
     
     
       4. The invention of  claim 1 , wherein forming the charge-dissipation structure comprises implanting ions of at least one of argon and xenon. 
     
     
       5. A device comprising:
 a dielectric;  
 at least one electrode disposed on a surface of a first portion of the dielectric, wherein the first portion and the at least one electrode form an electrode region of the device; and  
 a charge-dissipation structure formed in the electrode region and in a second portion of the dielectric located outside of the electrode region.  
 
     
     
       6. The invention of  claim 5 , wherein the charge-dissipation structure includes implanted ions. 
     
     
       7. The invention of  claim 6 , wherein the ions include gold or antimony ions, the ions are implanted with energies of between about 15 keV and about 50 keV, and the dose of ions implanted is between about 10 13  ions/cm 2  and about 10 17  ions/cm 2.    
     
     
       8. The invention of  claim 6 , wherein the ions are implanted so as to reduce the effect on the device of mobile charges on or in the dielectric. 
     
     
       9. The invention of  claim 6 , wherein the ions include non-metal ions. 
     
     
       10. The invention of  claim 6 , wherein the conductivity of the dielectric having ions implanted therein is greater than the conductivity of the dielectric would be without ions implanted therein. 
     
     
       11. The invention of  claim 5 , wherein the device is an electro-mechanical system. 
     
     
       12. The invention of  claim 11 , wherein a stationary part of the device includes the charge dissipation structure. 
     
     
       13. The invention of  claim 11 , wherein a moving part of the device includes the charge dissipation structure. 
     
     
       14. The invention of  claim 5 , wherein the charge-dissipation structure includes a thin conductive layer below and adjacent the surface of the dielectric. 
     
     
       15. The invention of  claim 5 , wherein ions are implanted in the electrode. 
     
     
       16. The invention of  claim 5 , wherein the charge-dissipation structure includes a thin conductive layer below and adjacent a portion of the surface of the dielectric on which the electrode is disposed. 
     
     
       17. The invention of  claim 5 , wherein a part of the charge-dissipation structure is formed in the at least one electrode. 
     
     
       18. The invention of  claim 5 , wherein a part of the charge-dissipation structure is formed in the first portion of the dielectric. 
     
     
       19. The invention of  claim 5 , wherein the charge-dissipation structure comprises ions of at least one of argon and xenon. 
     
     
       20. A device comprising:
 a dielectric;  
 at least one electrode disposed on a surface of the dielectric; and  
 a charge-dissipation structure in the dielectric, wherein: 
 the charge-dissipation structure includes implanted ions;  
 the device is an electro-mechanical system; and  
 a moving part of the device includes the charge-dissipation structure.