Dielectric ceramic composition, electronic device and their process of manufacturing

Abstract

A dielectric ceramic composition comprising a main component including 53.00 to 80.00 mol % magnesium oxide converted to MgO, 19.60 to 47.00 mol % titanium oxide converted to TiO 2 and 0.05 to 0.85 mol % manganese oxide converted to MnO. This dielectric ceramic composition may comprises 0.00 to 0.20 mol % of at least any one of vanadium oxide, yttrium oxide, ytterbium oxide or holmium oxide converted to V 2 O 5 , Y 2 O 3 , Yb 2 O 3 and Ho 2 O 3 respectively.

1. A dielectric ceramic composition comprising a main component including 53.00 to 80.00 mol % magnesium oxide converted to MgO, 19.60 to 47.00 mol % titanium oxide converted to TiO 2  and 0.05 to 0.85 mol % manganese oxide converted to MnO. 
     
     
       2. The dielectric ceramic composition as in  claim 1  comprising a main component including 60.00 to 70.00 mol % said magnesium oxide converted to MgO, 29.60 to 39.90 mol % said titanium oxide converted to TiO 2  and 0.20 to 0.60 mol % said manganese oxide converted to MnO. 
     
     
       3. The dielectric ceramic composition as in  claim 1 , as subcomponent, further comprising, with respect to entire dielectric ceramic composition, 0.00 to 0.20 mol % of at least any one of vanadium oxide, yttrium oxide, ytterbium oxide or holmium oxide converted to V 2 O 5 , Y 2 O 3 , Yb 2 O 3  and Ho 2 O 3  respectively. 
     
     
       4. The dielectric ceramic composition as in  claim 3  comprising, with respect to entire dielectric ceramic composition, 0.00 to 0.05 mol % of at least any one of said vanadium oxide, yttrium oxide, ytterbium oxide or holmium oxide converted to V 2 O 5 , Y 2 O 3 , Yb 2 O3 and Ho 2 O 3  respectively. 
     
     
       5. A process of manufacturing dielectric ceramic composition as in  claim 1 , comprising the steps of preparing source material for said dielectric ceramic composition and firing said source material under the temperature of 1300° C. or less to obtain said dielectric ceramic composition. 
     
     
       6. The process of manufacturing dielectric ceramic composition as in  claim 5  characterized in that said source material is anneal treated after being fired in reducing atmosphere. 
     
     
       7. An electronic device comprising dielectric layers, characterized in that said dielectric layers are composed of the dielectric ceramic composition as in  claim 1 . 
     
     
       8. An electronic device wherein inner electrodes and dielectric layers stacked alternately, characterized in that said dielectric layers are composed of the dielectric ceramic composition as in  claim 1 . 
     
     
       9. The electronic device as in  claim 8 , wherein said internal electrode at least includes nickel. 
     
     
       10. A process of manufacturing electronic device as in  claim 8 , characterized in cofiring internal electrode and dielectric layers under the temperature of 1300° C. or less. 
     
     
       11. The process of manufacturing the electronic device as in  claim 8  characterized in that said dielectric ceramic composition is anneal treated after being fired in reducing atmosphere. 
     
     
       12. A process of manufacturing dielectric ceramic composition as in  claim 2 , comprising the steps of preparing source material for said dielectric ceramic composition and firing said source material under the temperature of 1300° C. or less to obtain said dielectric ceramic composition. 
     
     
       13. A process of manufacturing dielectric ceramic composition as in  claim 3 , comprising the steps of preparing source material for said dielectric ceramic composition and firing said source material under the temperature of 1300° C. or less to obtain said dielectric ceramic composition. 
     
     
       14. An electronic device comprising dielectric layers, characterized in that said dielectric layers are composed of the dielectric ceramic composition as in  claim 2 . 
     
     
       15. An electronic device comprising dielectric layers, characterized in that said dielectric layers are composed of the dielectric ceramic composition as in  claim 3 . 
     
     
       16. An electronic device wherein inner electrodes and dielectric layers stacked alternately, characterized in that said dielectric layers are composed of the dielectric ceramic composition as in  claim 2 . 
     
     
       17. An electronic device wherein inner electrodes and dielectric layers stacked alternately, characterized in that said dielectric layers are composed of the dielectric ceramic composition as in  claim 3 . 
     
     
       18. A process of manufacturing electronic device as in  claim 9 , characterized in cofiring internal electrode and dielectric layers under the temperature of 1300° C. or less.