Integrated field emission array sensor, display, and transmitter, and apparatus including same

Abstract

An image detection apparatus including a field emission array and signal transmission circuits in communication with pixels of the field emission array. The field emission array includes a p-type substrate with an array of n-wells therein. Emitter tips, in communication with the n-wells, protrude from an emission surface of the p-type substrate. A detection surface of the p-type substrate is located opposite the emission surface thereof. Each signal transmission circuit of the field emission array includes a capacitor, a baseline potential transistor, and a signal transmission transistor. A first side of the capacitor communicates with a corresponding n-well of the field emission array. A second side of the capacitor communicates with the baseline potential transistor and the signal transmission transistor. The baseline potential transistor and the signal transmission transistor may share a drain. As radiation, such as visible light or near infrared radiation, impinges the detection surface of the field emission array, electron-hole pairs are created in p-n junctions between the p-type substrate and the n-wells. As a result, electrons are transferred from the impinged p-n junctions into the n-well adjacent thereto. The charge created in the n-well represents the intensity or wavelength of the radiation that has impinged the p-n junction. A signal representative of the wavelength or intensity of the impinging radiation is transmitted by the signal transmission circuit, and may be scanned by a scan circuit. Upon applying a relatively positive potential to an extraction grid associated with the field emission array, the excess electrons in n-wells may be emitted from an emitter tip adjacent the n-well. The emitted electrons may impinge a corresponding display pixel of a display so as to create a visible image thereon.

1. A video imaging system, comprising:
 a field emission array including:
 a p-type substrate comprising an image detection surface; 
 an n-well recessed in the p-type substrate; 
 a diffusion region between the p-type substrate and the n-well; 
 at least one emitter tip disposed in communication with the n-well; 
 a capacitor, a first side of which is in communication with the n-well; 
 a baseline potential transistor in communication with a second side of the capacitor; and 
 a signal transmission transistor in communication with the second side of the capacitor; 
 
 an image signal detector associated with the signal transmission transistor; and 
 an extraction grid disposed over the field emission array and including at least one aperture therethrough located substantially over the at least one emitter tip. 
 
   
   
     2. The video imaging system of  claim 1 , further comprising a cathodo-luminescent display disposed substantially parallel to and spaced apart from the extraction grid and including at least one display pixel corresponding to the at least one emitter tip. 
   
   
     3. The video imaging system of  claim 1 , wherein the baseline potential transistor and the signal transmission transistor share a common drain. 
   
   
     4. The video imaging system of  claim 1 , wherein a distance between the image detection surface and the n-well facilitates detection of electromagnetic radiation of a near infrared wavelength. 
   
   
     5. The video imaging system of  claim 1 , wherein a distance between the image detection surface and the n-well facilitates detection of electromagnetic radiation of a visible wavelength. 
   
   
     6. The video imaging system of  claim 1 , wherein the image signal detector is in communication with a source node of the signal transmission transistor. 
   
   
     7. The video imaging system of  claim 1 , further comprising a shutter component. 
   
   
     8. The video imaging system of  claim 7 , wherein the shutter component is configured to prevent electromagnetic radiation from impinging the n-well. 
   
   
     9. The video imaging system of  claim 1 , wherein the diffusion region is located proximate to the image detection surface and further comprising a layer of detection enhancement material adjacent the image detection surface. 
   
   
     10. The video imaging system of  claim 9 , wherein the detection enhancement material comprises a platinum silicide. 
   
   
     11. The video imaging system of  claim 1 , wherein the p-type substrate and the n-well each comprise a detection enhancement material. 
   
   
     12. The video imaging system of  claim 11 , wherein the detection enhancement material comprises a mercury-cadmium-tellurium alloy. 
   
   
     13. An image detection apparatus, comprising:
 a p-type substrate comprising an emission surface, an array of n-type wells disposed in the p-type substrate substantially along a plane proximate the emission surface, a p-n junction between the p-type substrate and each n-well of the array of n-type wells, and an image detection surface opposite the emission surface; 
 an array of emission pixels, each comprising at least one emitter tip protruding from the emission surface and in communication with a corresponding n-well of the array of n-type wells; 
 a capacitor in communication with selected n-wells of the array of n-type wells; 
 a signal transmission transistor in communication with the capacitor; 
 a baseline potential transistor in communication with the capacitor; and 
 an image signal detector in communication with the signal transmission transistor. 
 
   
   
     14. The apparatus of  claim 13 , wherein the signal transmission transistor and the baseline potential transistor share a drain node. 
   
   
     15. The apparatus of  claim 13 , wherein the image signal detector communicates with a source node of the signal transmission transistor. 
   
   
     16. The apparatus of  claim 13 , further comprising a shutter. 
   
   
     17. The apparatus of  claim 16 , wherein the shutter prevents electromagnetic radiation from penetrating selected n-wells of the array of n-type wells. 
   
   
     18. The apparatus of  claim 16 , wherein the shutter is positionable over a selected region of the image detection surface. 
   
   
     19. The apparatus of  claim 13 , wherein a distance between the image detection surface and an n-well of the array of n-type wells facilitates impingement of the p-n junction by electromagnetic radiation of an infrared or a near infrared wavelength. 
   
   
     20. The apparatus of  claim 13 , wherein a distance between the image detection surface and an n-well of the array of n-wells facilitates impingement of the p-n junction by electromagnetic radiation of a visible wavelength. 
   
   
     21. The apparatus of  claim 13 , further comprising a display disposed adjacent, substantially parallel to, and spaced apart from the emission surface. 
   
   
     22. The apparatus of  claim 21 , wherein the display comprises an array of display pixels, each display pixel of which corresponds substantially to at least one emission pixel of the array of emission pixels. 
   
   
     23. The apparatus of  claim 21 , wherein the display comprises a cathodo-luminescent display. 
   
   
     24. The apparatus of  claim 13 , wherein the p-n junction is located proximate to the image detection surface, the apparatus further comprising a layer of detection enhancement material adjacent the image detection surface. 
   
   
     25. The apparatus of  claim 24 , wherein the detection enhancement material comprises a platinum silicide. 
   
   
     26. The apparatus of  claim 13 , the p-type substrate and the array of n-type wells each comprise a detection enhancement material. 
   
   
     27. The apparatus of  claim 26 , wherein the detection enhancement material comprises a mercury-cadmium-tellurium alloy.