Merged P-i-N schottky structure

Abstract

A Merged P-i-N Schottky device in which the oppositely doped diffusions extend to a depth and have been spaced apart such that the device is capable of absorbing a reverse avalanche energy comparable to a Fast Recovery Epitaxial Diode having a comparatively deeper oppositely doped diffusion region.

1. A semiconductor device comprising:
 a substrate of a first conductivity type; 
 an epitaxial layer of said first conductivity type formed over a major surface of said substrate; 
 a plurality of stripes of a second conductivity type only being formed in a top surface of said epitaxial layer, each of said stripes of said second conductivity type extending to a first depth and laterally spaced from another stripe of said second conductivity type by a distance selected so that said device exhibits the same reverse avalanche energy absorption characteristics as a Fast Recovery Epitaxial Diode having a diffusion of a depth higher than said first depth; and 
 a schottky contact layer in contact with said plurality of spaced stripes of said second conductivity type and regions of said first conductivity type disposed between said spaced stripes of said second conductivity type. 
 
     
     
       2. A semiconductor device according to  claim 1 , wherein said stripes of said second conductivity type are five microns deep. 
     
     
       3. A semiconductor device according to  claim 1 , wherein said schottky contact layer is comprised of aluminum. 
     
     
       4. A semiconductor device according to  claim 1 , wherein said distance between a stripe of said second conductivity type and another stripe of said second conductivity type is eight microns. 
     
     
       5. A semiconductor device according to  claim 1 , wherein said distance between a stripe of said second conductivity type and another stripe of said second conductivity type is twelve microns. 
     
     
       6. A semiconductor device according to  claim 1 , wherein said distance between a stripe of said second conductivity type and another stripe of said second conductivity type is nineteen microns. 
     
     
       7. A semiconductor device according to  claim 1 , wherein said distance between said stripes of said second conductivity type is between eight microns and nineteen microns. 
     
     
       8. A semiconductor device according to  claim 1 , wherein said distance between a stripe of said second conductivity type and another stripe of said second conductivity type is no more than nineteen microns. 
     
     
       9. A semiconductor device according to  claim 1 , further comprising a back contact layer disposed over a second major surface of said substrate opposing said first major surface.