Semiconductor method and device

Abstract

A method for enhancing operation of a bipolar light-emitting transistor includes the following steps: providing a bipolar light-emitting transistor having emitter, base, and collector regions; providing electrodes for coupling electrical signals with the emitter, base, and collector regions; and adapting the base region to promote carrier transport from the emitter region toward the collector region by providing, in the base region, several spaced apart quantum size regions of different thicknesses, with the thicknesses of the quantum size regions being graded from thickest near the collector to thinnest near the emitter.

1. A method for enhancing operation of a bipolar light-emitting transistor, comprising the steps of:
 providing a bipolar transistor having emitter, base, and collector regions; 
 providing electrodes for coupling electrical signals with said emitter, base, and collector regions; and 
 adapting said base region to promote carrier transport from the emitter region toward the collector region by providing, in said base region, a first quantum size region in relatively closer proximity to said collector region and a second quantum size region in relatively closer proximity to said emitter region, and wherein said first quantum size region is thicker than said second quantum size region. 
 
   
   
     2. The method as defined by  claim 1 , wherein said step of providing quantum size regions comprises providing quantum wells. 
   
   
     3. The method as defined by  claim 1 , wherein said step of providing quantum size regions comprises providing quantum dot regions. 
   
   
     4. The method as defined by  claim 1 , wherein said step of providing quantum size regions comprises providing a quantum well and providing a quantum dot region. 
   
   
     5. The method as defined by  claim 1 , wherein said step of providing a bipolar light-emitting transistor comprises providing a heterojunction bipolar light-emitting transistor. 
   
   
     6. A method for enhancing operation of a bipolar light-emitting transistor, comprising the steps of:
 providing a bipolar light-emitting transistor having emitter, base, and collector regions; 
 providing electrodes for coupling electrical signals with said emitter, base, and collector regions; and 
 adapting said base region to promote carrier transport from the emitter region toward the collector region by providing, in said base region, several spaced apart quantum size regions of different thicknesses, with the thicknesses of said quantum size regions being graded from thickest near the collector to thinnest near the emitter. 
 
   
   
     7. The method as defined by  claim 6 , wherein said step of providing quantum size regions comprises providing quantum wells. 
   
   
     8. The method as defined by  claim 6 , wherein said step of providing quantum size regions comprises providing quantum dot regions. 
   
   
     9. The method as defined by  claim 6 , wherein said step of providing quantum size regions comprises providing at least one quantum well and providing at least one quantum dot region. 
   
   
     10. The method as defined by  claim 6 , wherein said step of providing a bipolar light-emitting transistor comprises providing a heterojunction bipolar light-emitting transistor.