Gate and CMOS structure and MOS structure

Abstract

Provided are a novel gate, a CMOS structure, and a MOS structure each of that has low resistance and excellent controllability. The gate is comprised of an intermetallic compound semiconductor that has an electric conductivity in a range of no less than 10 2 S·m −1 , nor more than 10 5 S·m −1 without impurities and has a band structure like that of a semiconductor.

1. A CMOS structure comprising a gate comprising an intermetallic compound semiconductor selected from the group consisting of MnSi 2 , Ru 2 Si 3 , Os 2 Si 3 , OsSi 2 , BaSi 2 , and Mg 2 Si, wherein the intermetallic compound semiconductor is without impurities, has an electric conductivity in a range of no less than 10 2  S·m −1 , nor more than 10 5  S·m −1 , and has a semiconductor band structure. 
   
   
     2. A MOS structure comprising a gate comprising an intermetallic compound semiconductor selected from the group consisting of MnSi 2 , Ru 2 Si 3 , Os 2 Si 3 , OsSi 2 , BaSi 2 , and Mg 2 Si, wherein the intermetallic compound semiconductor is without impurities, has an electric conductivity in a range of no less than 10 2  S·m −1 , nor more than 10 5  S·m −1 , and has a semiconductor band structure.