Multilayer wiring board and manufacture method thereof

Abstract

In a multilayer wiring board comprising a core board, and a wiring layer and an electrically insulating layer that are stacked on one surface of said core board, a thermal expansion coefficient of said core board in XY directions falls within a range of 2 to 20 ppm, a core member for said core board is a core member selected from silicon, ceramics, glass, a glass-epoxy composite, and metal, said core board is provided with a plurality of through holes that are made conductive between the front and the back by a conductive material, and a capacitor is provided on one surface of said core board, wherein said capacitor comprises an upper electrode being the conductive material in said through hole, and a lower electrode disposed so as to confront said upper electrode via a dielectric layer.

1. A multilayer wiring board comprising;
 a core board; and 
 a wiring layer and an electrically insulating layer that are stacked on one surface or both surfaces of said core board, wherein 
 a thermal expansion coefficient, in XY directions, of a core member used for said core board falls within a range of 2 to 20 ppm, and said core member is a core member selected from silicon, ceramics, glass, and a glass-epoxy composite, 
 said core board has its front and back that are electrically connected by a plurality of through holes filled with a conductive material, 
 said conductive material protrudes from a surface of said core member at least on one side thereof, and 
 an insulating layer is provided on inner wall surfaces of said through holes of said core member and on the surface of said core member. 
 
   
   
     2. A multilayer wiring board according to  claim 1 , wherein a thickness of said core member falls within a range of 50 to 500 μm, an opening diameter of said through hole on the front side, being a semiconductor chip mounting side, of said core member falls within a range of 10 to 200 μm, an opening diameter of said through hole on the back side of said core member falls within a range of 10 to 175 μm, the opening diameter on the back side is equal to or less than the opening diameter on the front side, and said conductive material protrudes from the surface of said core member within a range of 5 to 15 μm. 
   
   
     3. A multilayer wiring board according to  claim 1 , wherein said conductive material protrudes from the surface of said core member within a range of 5 to 15 μm to form a land, and a diameter of said land is larger than an opening diameter of said through hole filled with said conductive material. 
   
   
     4. A multilayer wiring board according to  claim 3 , wherein peripheral portions around said protruding lands are covered with an electrically insulating layer so that a flat surface is formed. 
   
   
     5. A multilayer wiring board according to  claim 1 , wherein an opening diameter of said through hole of said core member falls within a range of 10 to 100 μm, and a conductive substance diffusion preventing layer is provided on inner wall surfaces of said through holes. 
   
   
     6. A multilayer wiring board according to  claim 5 , wherein said conductive substance diffusion preventing layer is a thin film of titanium nitride. 
   
   
     7. A multilayer wiring board according to  claim 5 , wherein an opening diameter of said through hole of said core member falls within a range of 10 to 30 μm. 
   
   
     8. A multilayer wiring board comprising:
 a core board; and 
 a wiring layer and an electrically insulating layer that are stacked on said core board, wherein 
 a thermal expansion coefficient of said core board in XY directions falls within a range of 2 to 20 ppm, and a core member for said core board is a core member selected from silicon, ceramics, glass, a glass-epoxy composite, and metal, 
 said core board is provided with a plurality of through holes that are made conductive between the front and the back by a conductive material, and 
 a capacitor is provided on one surface of said core board, wherein said capacitor comprises an upper electrode being the conductive material in said through hole, and a lower electrode disposed so as to confront said upper electrode via a dielectric layer. 
 
   
   
     9. A multilayer wiring board according to  claim 8 , wherein a material of a dielectric layer forming said capacitor is one selected from silicon oxide, silicon nitride, barium strontium titanate, tantalum pentoxide, lead zirconate titanate, strontium titanate, aluminum oxide, benzocyclobutene resin, cardo resin, and polyimide resin. 
   
   
     10. A multilayer wiring board according to  claim 8 , wherein a material of said wiring layer and said lower electrode is selected from the group consisting of one kind of metal among Al, Cr, Cu, Ti, Pt, Ru, Ta, and W, and an oxide, a nitride, or an alloy of said metal, and a multilayer film in optional combination of said metal, said oxide, said nitride, said alloy, and polysilicon. 
   
   
     11. A multilayer wiring board according to  claim 8 , wherein a thickness of said core board falls within a range of 50 to 300 μm, and an opening diameter of said through hole falls within a range of 10 to 300 μm. 
   
   
     12. A multilayer wiring board comprising:
 a core board; and 
 a wiring layer and an electrically insulating layer that are stacked on said core board, wherein 
 a thermal expansion coefficient of said core board in XY directions falls within a range of 2 to 20 ppm, and a core member for said core board is a core member selected from silicon, ceramics, glass, a glass-epoxy composite, and metal, 
 said core board is provided with a plurality of through holes that are made conductive between the front and the back by a conductive material, and 
 a capacitor is provided on one surface of said core board, wherein said capacitor comprises an upper electrode provided on said core board so as to be connected to the conductive material in said through hole, and a lower electrode disposed so as to confront said upper electrode via a dielectric layer. 
 
   
   
     13. A multilayer wiring board according to  claim 12 , wherein a material of a dielectric layer forming said capacitor is one selected from silicon oxide, silicon nitride, barium strontium titanate, tantalum pentoxide, lead zirconate titanate, strontium titanate, aluminum oxide, benzocyclobutene resin, cardo resin, and polyimide resin. 
   
   
     14. A multilayer wiring board according to  claim 12 , wherein a material of said wiring layer and said lower electrode is selected from the group consisting of one kind of metal among Al, Cr, Cu, Ti, Pt, Ru, Ta, and W, and an oxide, a nitride, or an alloy of said metal, and a multilayer film in optional combination of said metal, said oxide, said nitride, said alloy, and polysilicon. 
   
   
     15. A multilayer wiring board according to  claim 12 , wherein a thickness of said core board falls within a range of 50 to 300 μm, and an opening diameter of said through hole falls within a range of 10 to 300 μm. 
   
   
     16. A multilayer wiring board comprising:
 a core board: and 
 a wiring layer and an electrically insulating layer that are stacked on said core board, wherein 
 a thermal expansion coefficient of said core board in XY directions falls within a range of 2 to 20 ppm, and a core member for said core board is a core member selected from silicon, ceramics, glass, a glass-epoxy composite, and metal, 
 said core board is provided with a plurality of through holes that are made conductive between the front and the back by a conductive material, and 
 a capacitor is provided on one surface of said core board, wherein said capacitor comprises an upper electrode provided on said core board via an electrically insulating layer so as to be connected to the conductive material in said through hole, a dielectric layer provided so as to cover at least part of said upper electrode, and a lower electrode provided so as to cover at least part of said dielectric layer. 
 
   
   
     17. A multilayer wiring board according to  claim 16 , wherein a material of a dielectric layer forming said capacitor is one selected from silicon oxide, silicon nitride, barium strontium titanate, tantalum pentoxide, lead zirconate titanate, strontium titanate, aluminum oxide, benzocyclobutene resin, cardo resin, and polyimide resin. 
   
   
     18. A multilayer wiring board according to  claim 16 , wherein a material of said wiring layer and said lower electrode is selected from the group consisting of one kind of metal among Al, Cr, Cu, Ti, Pt, Ru, Ta, and W, and an oxide, a nitride, or an alloy of said metal, and a multilayer film in optional combination of said metal, said oxide, said nitride, said alloy, and polysilicon. 
   
   
     19. A multilayer wiring board according to  claim 16 , wherein a thickness of said core board falls within a range of 50 to 300 μm, and an opening diameter of said through hole falls within a range of 10 to 300 μm. 
   
   
     20. A multilayer wiring board comprising:
 a core board; and 
 a wiring layer and an electrically insulating layer that are stacked on said core board, wherein 
 a thermal expansion coefficient of said core board in XY directions falls within a range of 2 to 20 ppm, and a core member for said core board is a core member selected from silicon, ceramics, glass, a glass-epoxy composite, and metal, 
 said core board is provided with a plurality of through holes that are made conductive between the front and the back by a conductive material, and 
 a capacitor is provided on one surface of said core board, wherein said capacitor comprises an upper electrode made of anodizable metal and provided on said core board so as to be connected to the conductive material in said through hole, and a lower electrode disposed so as to confront said upper electrode via a dielectric layer made of an oxide of said metal. 
 
   
   
     21. A multilayer wiring board according to  claim 20 , wherein a material of said wiring layer and said lower electrode is selected from the group consisting of one kind of metal among Al, Cr, Cu, Ti, Pt, Ru, Ta, and W, and an oxide, a nitride, or an alloy of said metal, and a multilayer film in optional combination of said metal, said oxide, said nitride, said alloy, and polysilicon. 
   
   
     22. A multilayer wiring board according to  claim 20 , wherein a thickness of said core board falls within a range of 50 to 300 μm, and an opening diameter of said through hole falls within a range of 10 to 300 μm. 
   
   
     23. A multilayer wiring board comprising:
 a core board; and 
 a wiring layer and an electrically insulating layer that are stacked on said core board, wherein 
 a thermal expansion coefficient of said core board in XY directions falls within a range of 2 to 20 ppm, and a core member for said core board is a core member selected from silicon, ceramics, glass, a glass-epoxy composite, and metal, 
 said core board is provided with a plurality of through holes that are made conductive between the front and the back by a conductive material, 
 a conductive substance diffusion preventing layer is provided on inner wall surfaces of said through holes, and 
 a capacitor is provided on one surface of said core board. 
 
   
   
     24. A multilayer wiring board according to  claim 23 , wherein said conductive substance diffusion preventing layer is a thin film of titanium nitride. 
   
   
     25. A multilayer wiring board according to  claim 23 , wherein an opening diameter of said through hole of said core member falls within a range of 10 to 30 μm.