P
US7094675B2ExpiredUtilityPatentIndex 48

Structure having spatially separated photo-excitable electron-hole pairs and method of manufacturing same

Assignee: BATTELLE MEMORIAL INSTITUTEPriority: Nov 22, 2000Filed: Jan 10, 2003Granted: Aug 22, 2006
Est. expiryNov 22, 2020(expired)· nominal 20-yr term from priority
Inventors:LIANG YONGDASCHBACH JOHN LSU YALICHAMBERS SCOTT A
C30B 23/02H10F 77/14C30B 29/605C30B 29/16B82Y 30/00B82Y 10/00Y10S977/774Y10S977/773Y10S977/895
48
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Claims

Abstract

A method for producing quantum dots. The method includes cleaning an oxide substrate and separately cleaning a metal source. The substrate is then heated and exposed to the source in an oxygen environment. This causes metal oxide quantum dots to form on the surface of the substrate.

Claims

exact text as granted — not AI-modified
1. A method for producing metal oxide quantum dots, the method comprising:
 a) cleaning an oxide substrate comprised of α-Cr 2 O 3 ;  
 b) cleaning a source comprised of a metal;  
 c) heating the substrate; and  
 d) exposing the substrate to the source in an oxygen environment causing metal oxide quantum dots to form on the surface of the substrate.  
 
     
     
       2. A method for producing metal oxide quantum dots, the method comprising:
 a) cleaning an oxide substrate;  
 b) cleaning a source comprised of a metal;  
 c) heating the substrate;  
 d) exposing the substrate to the source in an oxygen environment causing metal oxide quantum dots to form on the surface of the substrate; and  
 e) subjecting the dots formed on the substrate to a post-growth annealing.  
 
     
     
       3. The method of  claim 2 , wherein the post-growth annealing further comprises exposing the quantum dots to oxygen plasma with oxygen partial pressure approximately equal to 1×10 −5  Torr at a temperature in the range of approximately 620° C. to approximately 650° C. 
     
     
       4. The method of  claim 3 , wherein the quantum dots have a lateral dimension of less than or equal to 10 nanometers after the post-growth annealing.

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