Electrode-type heat sink

Abstract

The invention relates to a method of manufacturing a semiconductor device ( 10 ), wherein a semiconductor element ( 1 ) provided with a number of connection regions ( 2 ) is fitted between a first, electroconductive plate ( 3 ) and a second plate ( 4 ), wherein two connection conductors ( 3 A, 3 B) are formed, from the first plate ( 3 ), for the two connection regions ( 2 A, 2 B) of the element ( 1 ), wherein a passivating encapsulation ( 5 ) is provided between the plates ( 3, 4 ) and around the element ( 1 ), and wherein the device ( 10 ) is formed by applying a mechanical separating technique in two mutually perpendicular directions (L, M). In a method according to the invention, the connection conductors ( 3 A, 3 B) are formed by providing a mask ( 6 ) on the first conducting plate ( 3 ) in such a manner that a part ( 3 C) of the plate ( 3 ) situated between the connection regions ( 2 A, 2 B) remains exposed, which part is subsequently removed by etching. Such a method enables a very compact discrete or at least semi-discrete semiconductor device ( 10 ) to be readily obtained at low cost, while a high yield is achieved. In a preferred embodiment, also further parts ( 3 D) of the conducting plate ( 3 ) situated at the location where the device ( 10 ) is to be sawn, cut or broken remain uncovered by the mask ( 6 ) and are removed during etching.

1. A semiconductor device ( 10 ) comprising a semiconductor element ( 1 ), that is provided with a number of connection regions ( 2 ) and that is arranged between a first electrically conductive plate ( 3 ), and a second plate ( 3 ,  4 ), which first plate ( 3 ) is patterned into at least two connection conductors ( 3 A,  3 B), at least one of which is connected to the at least one connection region ( 2 A,  2 B) of the semiconductor element ( 1 ), between which first and second plates ( 3 ,  4 ) and around the semiconductor element ( 1 ) a passivating encapsulation ( 5 ) is present, characterized in that the device ( 10 ) is provided with further elements, which elements are mutually interconnected by means of conducting tracks in the patterned first conductive plate ( 3 ). 
     
     
       2. A semiconductor device as claimed in  claim 1 , wherein the semiconductor element is a transistor.