Polishing liquid composition

Abstract

A polishing liquid composition is applicable as a means of forming embedded metal interconnections on a semiconductor substrate. In a surface to be polished comprising an insulating layer and a metal interconnection layer, the polishing liquid composition is capable of maintaining a polishing speed of the metal layer, of suppressing an etching speed, and of preventing dishing of the metal layer.

1. A polishing liquid composition for polishing a surface to be polished comprising an insulating layer and a metal layer, the polishing liquid composition comprising a compound having six or more carbon atoms and a structure in which each of two or more adjacent carbon atoms has a hydroxyl group in a molecule, and water, wherein the compound having a structure in which each of two or more adjacent carbon atoms has a hydroxyl group in a molecule is represented by the formula (I):
   R 1 —X—(CH 2 ) q —[CH(OH)] n —CH 2 OH  (I) 
 
       wherein
 R 1  is a hydrocarbon group having 1 to 12 carbon atoms; 
 X is a group represented by
 (CH 2 ) m , wherein m is 1, 
 oxygen atom, 
 sulfur atom, 
 COO group, 
 OCO group, 
 a group represented by NR 2  or 
 O(R 2 O)P(O)O, wherein R 2  is hydrogen atom or a hydrocarbon group having 1 to 24 carbon atoms; 
 
 q is 0 or 1; and 
 n is an integer of 1 to 4. 
 
     
     
       2. The polishing liquid composition according to  claim 1 , further comprising an organic acid. 
     
     
       3. The polishing liquid composition according to  claim 2 , wherein the organic acid is an etching agent. 
     
     
       4. The polishing liquid composition according to  claim 1 , further comprising an etching agent comprising an inorganic acid. 
     
     
       5. The polishing liquid composition according to  claim 1 , further comprising an oxidizing agent, an abrasive or a mixture thereof. 
     
     
       6. A method of using a polishing liquid composition, the method comprising polishing a surface using the polishing liquid composition of  claim 1 . 
     
     
       7. The polishing liquid composition according to  claim 2 , further comprising an oxidizing agent, an abrasive or a mixture thereof. 
     
     
       8. A method of using a polishing liquid composition, the method comprising polishing a surface using the polishing liquid composition of  claim 2 . 
     
     
       9. A method of using a polishing liquid composition, the method comprising polishing a surface using the polishing liquid composition of  claim 5 . 
     
     
       10. A method of using a polishing liquid composition, the method comprising polishing a surface using the polishing liquid composition of  claim 7 . 
     
     
       11. A method of making a polishing liquid composition, the method comprising
 mixing water and a compound having a molecular structure in which each of two or more adjacent carbon atoms has a hydroxyl group; and 
 producing the polishing liquid composition of  claim 1 . 
 
     
     
       12. The polishing compound according to  claim 1 , wherein the compound having a structure in which each of two or more adjacent carbon atoms has a hydroxyl group in a molecule is selected from the group consisting of 1,2-heptanediol, 1,2-hexanediol, 1,2-octanediol, 1,2,3-hexanetriol, 1,2,6-hexanetriol, 1,2,3-heptanetriol, glyceryl ethers, monoglycerides, partially esterified products prepared by carrying out an esterification reaction of gluconic acid with an alcohol, compounds prepared by reacting glycidol with a monoalkylamine or a dialkylamine, diesters of tartaric acid, and 1,2-cyclohexanediol.