US7176461B2ExpiredUtilityA1
Acoustic absorption radiation sensing in SiC
Est. expiryJul 16, 2021(expired)· nominal 20-yr term from priority
Inventors:James D. Parsons
H10F 77/1226H10F 77/16H10F 30/10H10F 77/12
43
PatentIndex Score
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Cited by
21
References
25
Claims
Abstract
SiC at least about 400 micrometers thick, and preferably within the range of about 400-2,000 micrometers thick, is employed to detect electromagnetic radiation having a wavelength less than about 10 micrometers via an acoustic absorption mechanism. The SiC body preferably has a non-dopant impurity level low enough that it does not interfere with a single crystal structure for the SiC, and an approximately uniform thickness with an approximately flat radiation receiving surface.
Claims
exact text as granted — not AI-modified1. An electromagnetic radiation detection system, comprising:
a body of SiC having a thickness of at least about 400 micrometers, wherein said SiC has a single crystal structure, and
a detector arranged to detect acoustic absorption of electromagnetic radiation having a wavelength less than about 10 micrometers by said SiC body.
2. The system of claim 1 , wherein said detector is arranged to detect infrared (IR) radiation absorption by said SiC body.
3. The system of claim 1 , wherein the thickness of said SiC body is in the approximate range of 400–2,000 micrometers.
4. The system of claim 1 , wherein said detector is arranged to detect increases in the resistance of said SIC body in response to said body receiving radiation having a wavelength less than about 10 micrometers.
5. The system of claim 1 , further comprising a filter arranged to limit the reception of radiation by said SiC body to a narrow wavelength band.
6. The system of claim 1 , wherein the thickness of said SiC body is uniform.
7. The system of claim 1 , wherein said SiC body has a radiation receiving surface that is flat.
8. An electromagnetic radiation detection method, comprising:
irradiating a body of SiC having a thickness of at least about 400 micrometers with electromagnetic radiation having a wavelength less than about 10 micrometers, said SIC body having a single crystal structure, and
detecting an acoustic absorption response of said SiC body to said radiation.
9. The method of claim 8 , wherein said SiC body is irradiated with infrared (IR) radiation.
10. The method of claim 8 , wherein the thickness of said SiC body is in the approximate range of 400–2,000 micrometers.
11. The method of claim 8 , wherein said acoustic absorption is detected by detecting increases in the resistance of said SiC body in response to said radiation.
12. The method of claim 8 , wherein said radiation comprises a band of multiple wavelengths.
13. An electromagnetic radiation detection method, comprising:
irradiating a body of SiC having a thickness of at least about 400 micrometers with electromagnetic radiation having a wavelength less than about 10 micrometers, said SiC body having a single crystal structure, and
detecting a response of said SiC body to said radiation.
14. The method of claim 13 , wherein said SiC body is irradiated with infrared (IR) radiation.
15. The method of claim 13 , wherein the thickness of said SiC body is in the approximate range of 400–2,000 micrometers.
16. The method of claim 13 , wherein said response is detected by detecting increases in the resistance of said SiC body in response to said radiation.
17. The method of claim 13 , wherein said SiC body has uniform thickness.
18. An electromagnetic radiation detection method, comprising:
irradiating a uniform thickness body of SiC with radiation having a wavelength less than about 10 micrometers, said SiC body having a single crystal structure, and
detecting acoustic absorption of said radiation by said body.
19. The method of claim 18 , wherein said SiC body is irradiated with infrared (IR) radiation.
20. The method of claim 19 , wherein said acoustic absorption is detected by detecting increases in the resistance of said SiC body in response to said radiation.
21. An electromagnetic radiation detection method, comprising:
irradiating a body of SiC with radiation having a wavelength less than about 10 micrometers, said SiC body having a single crystal structure, and
detecting acoustic absorption of said radiation by said body.
22. The method of claim 21 , wherein said SiC body is irradiated with infrared (IR) radiation.
23. The method of claim 22 , wherein said acoustic absorption is detected by detecting increases in the resistance of said SiC body in response to said radiation.
24. The method of claim 21 , wherein said acoustic absorption is detected over a band of multiple wavelengths.
25. The method of claim 21 , further comprising filtering said radiation to a narrow wavelength band prior to irradiating said SiC body.Cited by (0)
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