US7176461B2ExpiredUtilityA1

Acoustic absorption radiation sensing in SiC

43
Assignee: HEETRONIXPriority: Jul 16, 2001Filed: Sep 5, 2003Granted: Feb 13, 2007
Est. expiryJul 16, 2021(expired)· nominal 20-yr term from priority
H10F 77/1226H10F 77/16H10F 30/10H10F 77/12
43
PatentIndex Score
0
Cited by
21
References
25
Claims

Abstract

SiC at least about 400 micrometers thick, and preferably within the range of about 400-2,000 micrometers thick, is employed to detect electromagnetic radiation having a wavelength less than about 10 micrometers via an acoustic absorption mechanism. The SiC body preferably has a non-dopant impurity level low enough that it does not interfere with a single crystal structure for the SiC, and an approximately uniform thickness with an approximately flat radiation receiving surface.

Claims

exact text as granted — not AI-modified
1. An electromagnetic radiation detection system, comprising:
 a body of SiC having a thickness of at least about 400 micrometers, wherein said SiC has a single crystal structure, and 
 a detector arranged to detect acoustic absorption of electromagnetic radiation having a wavelength less than about 10 micrometers by said SiC body. 
 
   
   
     2. The system of  claim 1 , wherein said detector is arranged to detect infrared (IR) radiation absorption by said SiC body. 
   
   
     3. The system of  claim 1 , wherein the thickness of said SiC body is in the approximate range of 400–2,000 micrometers. 
   
   
     4. The system of  claim 1 , wherein said detector is arranged to detect increases in the resistance of said SIC body in response to said body receiving radiation having a wavelength less than about 10 micrometers. 
   
   
     5. The system of  claim 1 , further comprising a filter arranged to limit the reception of radiation by said SiC body to a narrow wavelength band. 
   
   
     6. The system of  claim 1 , wherein the thickness of said SiC body is uniform. 
   
   
     7. The system of  claim 1 , wherein said SiC body has a radiation receiving surface that is flat. 
   
   
     8. An electromagnetic radiation detection method, comprising:
 irradiating a body of SiC having a thickness of at least about 400 micrometers with electromagnetic radiation having a wavelength less than about 10 micrometers, said SIC body having a single crystal structure, and 
 detecting an acoustic absorption response of said SiC body to said radiation. 
 
   
   
     9. The method of  claim 8 , wherein said SiC body is irradiated with infrared (IR) radiation. 
   
   
     10. The method of  claim 8 , wherein the thickness of said SiC body is in the approximate range of 400–2,000 micrometers. 
   
   
     11. The method of  claim 8 , wherein said acoustic absorption is detected by detecting increases in the resistance of said SiC body in response to said radiation. 
   
   
     12. The method of  claim 8 , wherein said radiation comprises a band of multiple wavelengths. 
   
   
     13. An electromagnetic radiation detection method, comprising:
 irradiating a body of SiC having a thickness of at least about 400 micrometers with electromagnetic radiation having a wavelength less than about 10 micrometers, said SiC body having a single crystal structure, and 
 detecting a response of said SiC body to said radiation. 
 
   
   
     14. The method of  claim 13 , wherein said SiC body is irradiated with infrared (IR) radiation. 
   
   
     15. The method of  claim 13 , wherein the thickness of said SiC body is in the approximate range of 400–2,000 micrometers. 
   
   
     16. The method of  claim 13 , wherein said response is detected by detecting increases in the resistance of said SiC body in response to said radiation. 
   
   
     17. The method of  claim 13 , wherein said SiC body has uniform thickness. 
   
   
     18. An electromagnetic radiation detection method, comprising:
 irradiating a uniform thickness body of SiC with radiation having a wavelength less than about 10 micrometers, said SiC body having a single crystal structure, and 
 detecting acoustic absorption of said radiation by said body. 
 
   
   
     19. The method of  claim 18 , wherein said SiC body is irradiated with infrared (IR) radiation. 
   
   
     20. The method of  claim 19 , wherein said acoustic absorption is detected by detecting increases in the resistance of said SiC body in response to said radiation. 
   
   
     21. An electromagnetic radiation detection method, comprising:
 irradiating a body of SiC with radiation having a wavelength less than about 10 micrometers, said SiC body having a single crystal structure, and 
 detecting acoustic absorption of said radiation by said body. 
 
   
   
     22. The method of  claim 21 , wherein said SiC body is irradiated with infrared (IR) radiation. 
   
   
     23. The method of  claim 22 , wherein said acoustic absorption is detected by detecting increases in the resistance of said SiC body in response to said radiation. 
   
   
     24. The method of  claim 21 , wherein said acoustic absorption is detected over a band of multiple wavelengths. 
   
   
     25. The method of  claim 21 , further comprising filtering said radiation to a narrow wavelength band prior to irradiating said SiC body.

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