Method of fabricating liquid crystal display device

Abstract

A method of fabricating a liquid crystal display device is disclosed in the present invention. The method includes forming a thin film transistor in a pixel region and a pad on an edge region of a first substrate, depositing an organic passivation layer over the first substrate, and removing the organic passivation layer in the edge region using a diffraction mask to expose a portion of the pad, wherein the diffraction mask has a slit portion including a plurality of slits having different widths.

1. A method of fabricating a liquid crystal display device, comprising:
 forming a thin film transistor in a pixel region and a pad on an edge region of a first substrate; 
 depositing an organic passivation layer over the first substrate; and 
 removing the organic passivation layer in the edge region using a diffraction mask to expose a portion of the pad, wherein the diffraction mask has a slit portion including a plurality of slits having different widths. 
 
     
     
       2. The method of  claim 1 , wherein the organic passivation layer is formed of one of benzo cyclo butene (BCB) and photo-acryl. 
     
     
       3. The method of  claim 1 , wherein the removing the organic passivation comprises,
 depositing a photoresist layer on the organic passivation layer in the edge region; 
 placing the diffraction mask having first and second light transmission regions over the photoresist layer for a light exposure, so that the first light transmission region transmits an amount of light greater than the second light transmission region; 
 developing the photoresist layer to completely remove the photoresist layer corresponding to the second light transmission region and to retain the photoresist layer corresponding to the first light transmission region; 
 etching the organic passivation layer to remove a part of the organic passivation layer corresponding to the second light transmission region; 
 removing the retained photoresist layer corresponding to the first light transmission region; and 
 etching the organic passivation layer to remove the organic passivation layer in the first and second light transmission regions. 
 
     
     
       4. The method of  claim 3 , wherein the diffraction mask of the second transmission region has a slit width greater than that of the first transmission region. 
     
     
       5. The method of  claim 3 , wherein the diffraction mask of the second light transmission region has a plurality of slits. 
     
     
       6. The method of  claim 1 , wherein the forming a thin film transistor comprises,
 forming a gate electrode on the first substrate; 
 depositing a gate insulating layer over the first substrate; 
 forming a semiconductor layer on the gate insulating layer; and 
 forming a source electrode and a drain electrode on the semiconductor layer. 
 
     
     
       7. The method of  claim 1 , further comprising forming a metal layer on the exposed portion of the pad. 
     
     
       8. The method of  claim 7 , wherein the metal layer is formed of one of indium tin oxide (ITO) and indium zinc oxide (IZO). 
     
     
       9. The method of  claim 1 , further comprising:
 forming a black matrix and a color filter layer on a second substrate; 
 forming a sealant on the edge region of the first substrate and attaching the first and second substrates to each other; and 
 forming a liquid crystal layer between the first and second substrates. 
 
     
     
       10. A method of fabricating a liquid crystal display device, comprising:
 forming a thin film transistor in a pixel region and a pad on an edge region of a first substrate; 
 depositing an organic passivation layer over the first substrate; 
 depositing a photoresist layer on the organic passivation layer in the edge region; 
 placing the diffraction mask having first and second light transmission regions over the photoresist layer for a light exposure, so that the first light transmission region transmits an amount of light greater than the second light transmission region; 
 developing the photoresist layer to completely remove the photoresist layer of the second light transmission region and to remain the photoresist layer of the first light transmission region; 
 etching the organic passivation layer to remove a part of the organic passivation layer of the second light transmission region; 
 removing the photoresist layer; and 
 etching the organic passivation layer to remove a remaining organic passivation layer. 
 
     
     
       11. The method of  claim 10 , wherein the organic passivation layer is formed of one of benzo cyclo butene (BCB) and photo-acryl. 
     
     
       12. The method of  claim 10 , wherein the diffraction mask of the second transmission region has a slit width greater than that of the first transmission region. 
     
     
       13. The method of  claim 10 , wherein the diffraction mask of the second light transmission region has a plurality of slits. 
     
     
       14. The method of  claim 10 , wherein the forming a thin film transistor comprises,
 forming a gate electrode on the first substrate; 
 depositing a gate insulating layer over the first substrate; 
 forming a semiconductor layer on the gate insulating layer; and 
 forming a source electrode and a drain electrode on the semiconductor layer. 
 
     
     
       15. The method of  claim 10 , further comprising forming a metal layer on the exposed portion of the pad. 
     
     
       16. The method of  claim 15 , wherein the metal layer is formed of one of indium tin oxide (ITO) and indium zinc oxide (IZO). 
     
     
       17. The method of  claim 10 , further comprising:
 forming a black matrix and a color filter layer on a second substrate; 
 forming a sealant on the edge region of the first substrate and attaching the first and second substrates to each other; and 
 forming a liquid crystal layer between the first and second substrates.