Semiconductor device and method of manufacturing the same

Abstract

A semiconductor device includes at least one semiconductor structure which has a plurality of external connection electrodes formed on a semiconductor substrate. An insulating sheet member is arranged on the side of the semiconductor structure. Upper interconnections have connection pad portions that are arranged on the insulating sheet member in correspondence with the upper interconnections and connected to the external connection electrodes of the semiconductor structure.

1. A semiconductor device comprising:
 at least one semiconductor structure which includes: (i) a semiconductor substrate, (ii) a plurality of external connection electrodes which are formed on the semiconductor substrate and each of which includes a connection pad and a columnar connection electrode connected to the connection pad, and (iii) a sealing film formed around the columnar connection electrodes; 
 an insulating sheet member arranged on one side of the semiconductor structure; and 
 a plurality of upper interconnections which include connection pad portions that are arranged on the insulating sheet member and electrically connected to the external connection electrodes of the semiconductor structure; 
 wherein the insulating sheet member has a multilayered structure including a plurality of insulating sheet members. 
 
     
     
       2. A semiconductor device according to  claim 1 , wherein the semiconductor device comprises a plurality of said semiconductor structures. 
     
     
       3. A semiconductor device according to  claim 1 , wherein at least one of the insulating sheet members of the multilayered structure of the insulating sheet member consists essentially of a material prepared by impregnating fibers with a thermosetting resin. 
     
     
       4. A semiconductor device according to  claim 1 , wherein the plurality of insulating sheet members of the multilayered structure comprise a first insulating sheet member arranged at least beside the semiconductor structure and a second insulating sheet member formed between the first insulating sheet member and the upper interconnections and between the upper interconnections and the semiconductor structure. 
     
     
       5. A semiconductor device according to  claim 4 , wherein an upper surface of the second insulating sheet member is flat. 
     
     
       6. A semiconductor device according to  claim 1 , further comprising an upper insulating film which covers a portion except the connection pad portions of the upper interconnections. 
     
     
       7. A semiconductor device according to  claim 6 , further comprising a solder ball formed on each of the connection pad portions of the upper interconnections. 
     
     
       8. A semiconductor device according to  claim 1 , further comprising a metal layer formed on lower surfaces of the semiconductor structure and the insulating sheet member. 
     
     
       9. A semiconductor device according to  claim 8 , further comprising an insulating layer formed on a lower surface of the metal layer. 
     
     
       10. A semiconductor device according to  claim 8 , wherein the metal layer includes a metal foil. 
     
     
       11. A semiconductor device according to  claim 10 , wherein the metal foil is a copper foil. 
     
     
       12. A semiconductor device according to  claim 1 , further comprising a lower interconnection formed on at least a lower surface of the insulating sheet member, wherein one of the upper interconnections is connected to the lower interconnection through a vertical electrical connection portion formed in the insulating sheet member. 
     
     
       13. A semiconductor device according to  claim 1 , wherein the plurality of insulating sheet members of the multilayered structure comprise a first insulating sheet member having an upper surface that is flush with an upper surface of the semiconductor substrate, and a second insulating sheet member formed between the first insulating sheet member and the upper interconnections. 
     
     
       14. A semiconductor device comprising:
 at least one semiconductor structure which includes a semiconductor substrate and a plurality of external connection electrodes formed on the semiconductor substrate; 
 an insulating sheet member arranged on one side of the semiconductor structure; 
 a plurality of upper interconnections which include connection pad portions that are arranged on the insulating sheet member and electrically connected to the external connection electrodes of the semiconductor structure; 
 a metal layer formed on lower surfaces of the semiconductor structure and the insulating sheet member; and 
 an insulating layer formed on a lower surface of the metal layer. 
 
     
     
       15. A semiconductor device according to  claim 14 , wherein the semiconductor device comprises a plurality of said semiconductor structures. 
     
     
       16. A semiconductor device according to  claim 14 , wherein each of the external connection electrodes of the semiconductor substrate includes a connection pad and a columnar connection electrode connected to the connection pad, and wherein the semiconductor substrate further comprises a sealing film formed around the columnar connection electrodes. 
     
     
       17. A semiconductor device according to  claim 14 , wherein the insulating sheet member consists essentially of a material prepared by impregnating fibers with a thermosetting resin. 
     
     
       18. A semiconductor device according to  claim 14 , further comprising an insulating material formed between the insulating sheet member and the upper interconnections and between the upper interconnections and the semiconductor structure. 
     
     
       19. A semiconductor device according to  claim 18 , wherein the insulating material comprises a sheet member. 
     
     
       20. A semiconductor device according to  claim 18 , wherein an upper surface of the insulating material is flat. 
     
     
       21. A semiconductor device according to  claim 14 , further comprising an upper insulating film which covers a portion except the connection pad portions of the upper interconnections. 
     
     
       22. A semiconductor device according to  claim 21 , further comprising a solder ball formed on each of the connection pad portions of the upper interconnections. 
     
     
       23. A semiconductor device according to  claim 14 , wherein the metal layer includes a metal foil. 
     
     
       24. A semiconductor device according to  claim 23 , wherein the metal foil is a copper foil. 
     
     
       25. A semiconductor device comprising:
 at least one semiconductor structure which includes a semiconductor substrate and a plurality of external connection electrodes formed on the semiconductor substrate; 
 an insulating sheet member arranged on one side of the semiconductor structure; 
 a plurality of upper interconnections which include connection pad portions that are arranged on the insulating sheet member and electrically connected to the external connection electrodes of the semiconductor structure; and 
 a lower interconnection formed on at least a lower surface of the insulating sheet member; 
 wherein one of the upper interconnections is connected to the lower interconnection through a vertical electrical connection portion formed in the insulating sheet member. 
 
     
     
       26. A semiconductor device according to  claim 25 , wherein the semiconductor device comprises a plurality of said semiconductor structures. 
     
     
       27. A semiconductor device according to  claim 25 , wherein each of the external connection electrodes of the semiconductor substrate includes a connection pad and a columnar connection electrode connected to the connection pad, and wherein the semiconductor substrate further comprises a sealing film formed around the columnar connection electrodes. 
     
     
       28. A semiconductor device according to  claim 25 , wherein the insulating sheet member consists essentially of a material prepared by impregnating fibers with a thermosetting resin. 
     
     
       29. A semiconductor device according to  claim 25 , further comprising an insulating material formed between the insulating sheet member and the upper interconnections and between the upper interconnections and the semiconductor structure. 
     
     
       30. A semiconductor device according to  claim 29 , wherein the insulating material comprises a sheet member. 
     
     
       31. A semiconductor device according to  claim 29 , wherein an upper surface of the insulating material is flat. 
     
     
       32. A semiconductor device according to  claim 25 , further comprising an upper insulating film which covers a portion except the connection pad portions of the upper interconnections. 
     
     
       33. A semiconductor device according to  claim 32 , further comprising a solder ball formed on each of the connection pad portions of the upper interconnections. 
     
     
       34. A semiconductor device according to  claim 25 , wherein the insulating sheet member has a multilayered structure including a plurality of insulating sheet members. 
     
     
       35. A semiconductor device comprising:
 at least one semiconductor structure which includes: (i) a semiconductor substrate, (ii) a plurality of external connection electrodes which are formed on the semiconductor substrate and each of which includes a connection pad and a columnar connection electrode connected to the connection pad, and (iii) a sealing film formed around the columnar connection electrodes; 
 an insulating sheet member arranged on one side of the semiconductor structure; 
 a plurality of upper interconnections which include connection pad portions that are arranged on the insulating sheet member and electrically connected to the external connection electrodes of the semiconductor structure; 
 a metal layer formed on lower surfaces of the semiconductor structure and the insulating sheet member; and 
 an insulating layer formed on a lower surface of the metal layer. 
 
     
     
       36. A semiconductor device comprising:
 at least one semiconductor structure which includes: (i) a semiconductor substrate, (ii) a plurality of external connection electrodes which are formed on the semiconductor substrate and each of which includes a connection pad and a columnar connection electrode connected to the connection pad, and (iii) a sealing film formed around the columnar connection electrodes; 
 an insulating sheet member arranged on one side of the semiconductor structure; 
 a plurality of upper interconnections which include connection pad portions that are arranged on the insulating sheet member and electrically connected to the external connection electrodes of the semiconductor structure; and 
 a lower interconnection formed on at least a lower surface of the insulating sheet member, wherein one of the upper interconnections is connected to the lower interconnection through a vertical electrical connection portion formed in the insulating sheet member.