Magnetic memory structure using heater lines to assist in writing operations

Abstract

The invention includes a stacked magnetic memory structure. The magnetic memory structure includes a stacked magnetic memory structure. The first layer includes a first plurality of magnetic tunnel junctions. A second layer is formed adjacent to the first layer. The second layer includes a second plurality of magnetic tunnel junctions. The stacked magnetic memory structure further includes a common first group conductor connected to each of the first plurality of magnetic tunnel junctions and the second plurality of magnetic tunnel junctions.

1. A computing system comprising:
 a central processing unit; 
 a memory array electronically connected to the central processing unit; 
 the memory array comprising a magnetic memory structure; 
 the magnetic memory structure comprising: 
 a first group of magnetic tunnel junctions, the first group comprising: 
 a first layer formed adjacent to a substrate, the first layer comprising a first plurality of magnetic tunnel junctions; 
 a second layer formed adjacent to the first layer, the second layer comprising a second plurality of magnetic tunnel junctions; 
 a first heater formed adjacent to at least one of the first plurality of magnetic tunnel junctions and the second plurality of magnetic tunnel junctions, the first heater providing thermal heat to the at least one of the first plurality of magnetic tunnel junctions and the second plurality of magnetic tunnel junctions, the first heater being formed by a common first group conductor comprising first heat regions proximate to at least one of the first plurality of magnetic tunnel junctions and the second plurality of magnetic tunnel junctions; wherein
 current conducted through the common first group conductor can be used to aid both writing and heating of more than one of the first magnetic tunnel junctions;
 a second group of magnetic tunnel junctions, the second group comprising: 
 a second group first layer formed adjacent to the substrate, the second group first comprising a third plurality of magnetic tunnel junctions; 
 a second group second layer formed adjacent to the second group first layer, the second group second layer comprising a fourth plurality of magnetic tunnel junctions; 
 a third heater formed adjacent to at least one of the third plurality of magnetic tunnel junctions and the fourth plurality of magnetic tunnel junctions, the third heater providing thermal heat to the at least one of the third plurality of magnetic tunnel functions and the fourth plurality of magnetic tunnel junctions, 
 wherein the first heater is turned on if the first and second pluralities of magnetic tunnel junctions are selected, and the third heater is turned on if the third and fourth magnetic tunnel junctions are selected. 
 
 
 
   
   
     2. The computing system of  claim 1 , further comprising:
 a second heater formed adjacent to an other of the first plurality of magnetic tunnel junctions and the second plurality of magnetic tunnel junctions, the second heater providing thermal heat to the other of the first plurality of magnetic tunnel junctions and the second plurality of magnetic tunnel junctions. 
 
   
   
     3. The computing system of  claim 1 , wherein a heater of a group is turned on only when the group is selecting for writing. 
   
   
     4. The computing system of  claim 1 , wherein active devices that control selection of the magnetic tunnel junction are formed on a substrate associated with the magnetic memory structure. 
   
   
     5. The computing system of  claim 1 , wherein active devices that control sensing of magnetic states of the magnetic tunnel junction are formed in the substrate. 
   
   
     6. The computing system of  claim 1 , wherein less write current is required to write to a selected group of magnetic tunnel junctions than to a non-selected group. 
   
   
     7. The computing system of  claim 1 , wherein less write current is required to write to the first, second, third and fourth magnetic tunnel junctions if a corresponding heater is turned on than if the corresponding heater is turned off. 
   
   
     8. The computing system of  claim 1 , further comprising first select lines, second select lines and third select lines, the first select lines selecting individual magnetic tunnel junctions, the second select lines and third select lines selecting the first and second pluralities of magnetic tunnel junctions. 
   
   
     9. The computing system of  claim 8 , wherein a first select line, a second select line and a third select line must be selected to write to a magnetic tunnel junction. 
   
   
     10. The computing system of  claim 8 , wherein only a first select line and a second select line must be selected to read from a magnetic tunnel junction. 
   
   
     11. The computing system of  claim 8 , wherein the first select lines are column select lines, the second select lines are row enable lines and the third select lines are write enable lines. 
   
   
     12. The computing system of  claim 1 , wherein the third heater is formed from at least one of tungsten and platinum.