Microelectromechanical thin-film device

Abstract

Processing and systems to create, and resulting products related to, very small-dimension singular, or monolithically arrayed, semiconductor mechanical devices. Processing is laser performed on selected semiconductor material whose internal crystalline structure becomes appropriately changed to establish the desired mechanical properties for a created device.

1. A microelectromechanical system (MEMS) thin-film device comprising:
 a mechanical device having a mechanical body made from a thin-film material; 
 an electronic device formed within the mechanical body; 
 wherein the mechanical device is a cantilever beam, including a thin-film material with a first crystalline structure; and, 
 wherein the electrical device is a transistor, including a semiconductor material having a second crystalline structure. 
 
   
   
     2. The thin-film device of  claim 1  wherein the wherein the first crystalline structure is different from the second crystalline structure. 
   
   
     3. The thin-film device of  claim 1  wherein the cantilever beam thin-film material is the same as the transistor semiconductor material; and
 wherein the first crystalline structure is different from the second crystalline structure. 
 
   
   
     4. The thin-film device of  claim 1  wherein the cantilever beam thin-film material has a laser-annealed first crystalline structure; and
 wherein the transistor semiconductor material has a laser-annealed second crystalline structure. 
 
   
   
     5. The thin-film device of  claim 1  wherein the cantilever beam thin-film material has a temporary pre-annealed third crystalline structure and a post-annealed first crystalline structure; and
 wherein the transistor semiconductor material has a temporary pre-annealed fourth crystalline structure and a post-annealed second crystalline structure. 
 
   
   
     6. The thin-film device of  claim 1  wherein the cantilever beam thin-film includes both a fifth crystalline structure region and a first crystalline structure region; and
 wherein the transistor semiconductor material includes both a sixth crystalline structure region and a second crystalline structure region. 
 
   
   
     7. The thin-film device of  claim 1  wherein the cantilever beam thin-film first crystalline structure is associated with a first mechanical property. 
   
   
     8. The thin-film device of  claim 1  further comprising:
 a substrate; and 
 wherein the cantilever beam has a mechanical body with a first end connected to the substrate, and an extended second end. 
 
   
   
     9. The thin-film device of  claim 8  wherein the substrate is a material selected from the group including glass, quartz, plastic, metal, flex materials, fabrics, copper foil, metal foil, and Low-melting temperature materials. 
   
   
     10. The thin-film device of  claim 8  wherein the cantilever beam mechanical body and the electronic device are formed from materials selected from the group including silicon, germanium, silicon-germanium, dielectrics, copper, silicon dioxide, aluminum, tantalum, titanium, and piezoelectric materials. 
   
   
     11. The thin-film device of  claim 10  wherein the combination of the cantilever beam and the transistor form an environmental sensor. 
   
   
     12. The thin-film device of  claim 11  wherein the environmental sensor is sensitized to react to a stimulus selected from the group including motion, chemical, and biological. 
   
   
     13. A microelectromechanical system (MEMS) thin-film device comprising:
 a mechanical device having a mechanical body made from a thin-film material; 
 an electronic device formed within the mechanical body; 
 wherein the mechanical device is a thin-film material with a first crystalline structure; and, 
 wherein the electrical device is a transistor, including a semiconductor material having a second crystalline structure. 
 
   
   
     14. The thin-film device of  claim 13  wherein the mechanical device is selected from a group consisting of a cantilever beam, an oscillating element, an actuator, and a relay switch.