US7254877B2ExpiredUtilityA1

Method for the manufacture of a piezoelectric element

77
Assignee: SEIKO EPSON CORPPriority: Feb 9, 2001Filed: May 9, 2006Granted: Aug 14, 2007
Est. expiryFeb 9, 2021(expired)· nominal 20-yr term from priority
Inventors:Masami Murai
Y10T29/49156B41J 2/1642Y10T29/42Y10T29/435B41J 2/1645B41J 2002/14491Y10T29/49126B41J 2/161Y10T29/49155B41J 2/1628B41J 2/1646B41J 2/1623Y10T29/49401H10N 30/078H10N 30/082H10N 30/2047H10N 30/079
77
PatentIndex Score
6
Cited by
40
References
4
Claims

Abstract

A piezoelectric element with stable and excellent piezoelectric properties is made by: a step of forming a diaphragm 30 ( 31, 32 ) on a substrate 20 (S 1 ); a step of forming a bottom electrode 33 on the diaphragm 30 (S 2 ); a step of forming a first piezoelectric layer 43 a on the bottom electrode 33 (S 3 ); a step of patterning both the piezoelectric layer 43 a and the bottom electrode 33 (S 4 ); a step of forming a second piezoelectric layer on the piezoelectric layer 43 a and on the diaphragm 30 to mature a piezoelectric film 43 (S 5 ); and a step of forming a top electrode 44 on the piezoelectric film 43 (S 6 ).

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
       1. A method for the manufacture of a piezoelectric element, comprising:
 a step of forming a diaphragm on a substrate; 
 a step of forming a bottom electrode on said diaphragm; 
 a step of forming a first Ti layer on said bottom electrode; 
 a step of patterning said bottom electrode to a prescribed shape; 
 a step of forming a second Ti layer on the bottom electrode that was left by said patterning, and on said diaphragm from which the bottom electrode was removed; 
 a step of forming a piezoelectric film on the bottom electrode on which said second Ti layer was formed; and 
 a step of forming a top electrode on said piezoelectric film. 
 
     
     
       2. The method for the manufacture of a piezoelectric element according to  claim 1 ,
 wherein the thickness of said first Ti layer formed by said step of forming a first Ti layer is greater than the thickness of said second Ti layer formed in said step of forming a second Ti layer. 
 
     
     
       3. The method for the manufacture of a piezoelectric element according to  claim 1 ,
 wherein the sum of the thickness of said first and second Ti layers formed in said steps of forming Ti layers is no less than 3 nm and no more than 20 nm. 
 
     
     
       4. A method for the manufacture of an ink-jet recording head comprising a piezoelectric element obtained by a method described in  claim 1 , comprising the steps of:
 etching said substrate and forming pressure chambers; and 
 forming a nozzle plate covering said pressure chambers.

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