Method for forming pattern of liquid crystal display device and method for fabricating thin film transistor array substrate of liquid crystal display device using the same

Abstract

A method for forming a pattern of a liquid crystal display device is provided. The method includes providing a substrate having a layer to be patterned, providing a master substrate having an intaglio portion corresponding to a desired pattern, filling an organic material into the intaglio portion of the master substrate, placing the master substrate in contact with the substrate, hardening the organic material to produce a hardened organic film pattern, transferring the hardened organic film pattern onto a surface of the layer to be patterned by separating the master substrate from the substrate, and etching the layer to be patterned by using the organic film pattern as a mask.

1. A method for forming a pattern of a liquid crystal display device, comprising:
 providing a substrate having a layer to be patterned; 
 providing a master substrate having an intaglio portion corresponding to a desired pattern; 
 filling an organic material into the intaglio portion of the master substrate; 
 placing the master substrate in contact with the substrate; 
 hardening the organic material to produce a hardened organic film pattern; 
 transferring the hardened organic film pattern onto a surface of the layer to be patterned by separating the master substrate from the substrate; and 
 etching the layer to be patterned by using the organic film pattern as a mask. 
 
     
     
       2. The method of  claim 1 , wherein the master substrate includes a mold having the intaglio portion. 
     
     
       3. The method of  claim 2 , wherein the mold is made of a transparent elastic resin. 
     
     
       4. The method of  claim 3 , wherein the transparent elastic resin is PDMS (polydimethylsiloxane). 
     
     
       5. The method of  claim 1 , wherein the organic material is a photosensitive material. 
     
     
       6. The method of  claim 5 , wherein the photosensitive material is photoresist. 
     
     
       7. The method of  claim 1 , wherein the layer to be patterned is an insulating layer, a semiconductor layer, or a metal layer. 
     
     
       8. The method of  claim 1 , wherein the filling step fills in the intaglio portion from a first side of the master substrate. 
     
     
       9. The method of  claim 8 , wherein the hardening step includes irradiating light onto a second side of the master substrate. 
     
     
       10. The method of  claim 9 , wherein the first and second sides of the master substrate are opposite sides. 
     
     
       11. The method of  claim 1 , wherein the filling of the organic material is made by a spin coating method, an inkjet printing method, or a knife jetting method. 
     
     
       12. A method for fabricating a thin film transistor (TFT) array substrate for a liquid crystal display device, comprising:
 providing a first substrate; 
 forming a gate metal on the first substrate; 
 filling an organic material into the intaglio portion of a master substrate; 
 placing the master substrate in contact with the first substrate; 
 hardening the first organic material to produce a hardened first organic film pattern; 
 transferring the hardened first organic film pattern onto the gate metal by separating the master substrate from the first substrate; 
 forming a gate electrode by etching the gate metal by using the first organic film pattern as a mask; 
 depositing a first insulating film, an amorphous silicon thin film and an n+ amorphous silicon thin film on the first substrate on which the gate electrode is formed; 
 forming an active pattern by patterning the n+ amorphous silicon thin film and the amorphous silicon thin film; 
 forming a source electrode and a drain electrode on the active pattern; 
 forming a second insulating film having a contact hole exposing a part of the drain electrode; and 
 forming a pixel electrode electrically connected to the drain electrode through the contact hole. 
 
     
     
       13. The method of  claim 12 , wherein the step of forming the active pattern comprises:
 transferring a second organic film pattern onto the first substrate; and 
 forming the active pattern by etching the n+ amorphous silicon thin film and the amorphous silicon thin film by using the second organic film pattern as a mask. 
 
     
     
       14. A method for fabricating a thin film transistor (TFT) array substrate of liquid crystal display device, comprising:
 providing a first substrate; 
 forming a gate electrode on the first substrate; 
 depositing a first insulating film, an amorphous silicon thin film and an n+ amorphous silicon thin film on the first substrate on which the gate electrode is formed; 
 filling an organic material into the intaglio portion of a master substrate; 
 placing the master substrate in contact with the first substrate; 
 hardening the organic material to produce a hardened organic film pattern; 
 transferring the hardened organic film pattern onto the first substrate by separating the master substrate from the first substrate; 
 forming an active pattern by etching the n+ amorphous silicon thin film and the amorphous silicon thin film by using the organic film pattern as a mask; 
 forming a source electrode and a drain electrode on the active pattern; 
 forming a second insulating film having a contact hole exposing a part of the drain electrode; and 
 forming a pixel electrode electrically connected to the drain electrode through the contact hole. 
 
     
     
       15. The method of  claim 14 , wherein the organic film pattern has a width that covers stepped portions of layers on the gate electrode. 
     
     
       16. A method of forming a pattern of a display device, comprising:
 providing a mold layer having a groove filled with a photosensitive material; 
 hardening the photosensitive material; 
 transferring the hardened photosensitive material onto a surface of a layer to be patterned; and 
 patterning the layer to be patterned by using the transferred photosensitive material as a mask. 
 
     
     
       17. The method of  claim 16 , wherein the layer patterned by the patterning step is a gate electrode. 
     
     
       18. The method of  claim 16 , wherein the layer patterned by the patterning step is at least one of an active layer and an ohmic contact layer. 
     
     
       19. The method of  claim 16 , wherein the hardening step hardens the photosensitive material by irradiating light towards one surface of the mold layer. 
     
     
       20. The method of  claim 16 , wherein the transferring step includes:
 placing the mold layer in contact with the layer to be patterned; and thereafter separating the mold layer from the layer to be patterned. 
 
     
     
       21. The method of  claim 12 , wherein the hardening step includes irradiating light to the organic film pattern in the master substrate. 
     
     
       22. The method of  claim 14 , wherein the hardening step includes irradiating light to the organic film pattern in the master substrate. 
     
     
       23. A method for fabricating a thin film transistor (TFT) array substrate for a liquid crystal display device, comprising:
 providing a first substrate; 
 forming a gate metal on the first substrate; 
 providing a mold having a groove filled with a photosensitive material; 
 hardening the photosensitive material; 
 transferring the hardened photosensitive material onto the gate metal; 
 forming a gate electrode by etching the gate metal by using the transferred photosensitive material as a mask; 
 depositing a first insulating film, an amorphous silicon thin film and an n+ amorphous silicon thin film on the first substrate on which the gate electrode is formed; 
 forming an active pattern by patterning the n+ amorphous silicon thin film and the amorphous silicon thin film; 
 forming a source electrode and a drain electrode on the active pattern; 
 forming a second insulating film having a contact hole exposing a part of the drain electrode; and 
 forming a pixel electrode electrically connected to the drain electrode through the contact hole. 
 
     
     
       24. The method of  claim 23 , wherein the hardening includes irradiating light to the photosensitive material in the mold. 
     
     
       25. A method for fabricating a thin film transistor (TFT) array substrate of liquid crystal display device, comprising:
 providing a first substrate; 
 forming a gate electrode on the first substrate; 
 depositing a first insulating film, an amorphous silicon thin film and an n+ amorphous silicon thin film on the first substrate on which the gate electrode is formed; 
 providing a mold having a groove filled with a photosensitive material; 
 hardening the photosensitive material; 
 transferring the hardened photosensitive material onto the first substrate; 
 forming an active pattern by etching the n+ amorphous silicon thin film and the amorphous silicon thin film by using the transferred photosensitive material as a mask; 
 forming a source electrode and a drain electrode on the active pattern; 
 forming a second insulating film having a contact hole exposing a part of the drain electrode; and 
 forming a pixel electrode electrically connected to the drain electrode through the contact hole. 
 
     
     
       26. The method of  claim 25 , wherein the hardening includes irradiating light to the photosensitive material in the mold.