Semiconductor memory device

Abstract

The present invention provides a semiconductor memory device for reducing a power consumption and securing an enough valid data window. A semiconductor memory device includes an align control signal generation unit for generating a plurality of align control signals sequentially activated by dividing a data strobe signal only when a data input/output is performed; and a data align unit for outputting a plurality of data which are sequentially inputted as a plurality of align data at the same time in response to the plurality of align control signals.

1. A semiconductor memory device, comprising: an align control signal generation unit for generating a plurality of align control signals sequentially activated by dividing a data strobe signal only when a data input/output is performed; and a data align unit for outputting a plurality of data which are sequentially inputted as a plurality of align data, at the same time in response to the plurality of align control signals, wherein the align control signal generation unit includes:
 a dividing unit for dividing the data strobe signal by 2 in response to an activation of a write flag signal; and 
 an output unit for generating a plurality of align control signals by synchronizing a main output and a sub output of the dividing unit with the data strobe signal, said plurality of align control signals including first to fourth align control signals which are activated in synchronization with a rising edge and a falling edge of the data strobe signal inputted after an activation of the write flag signal. 
 
   
   
     2. The semiconductor memory device as recited in  claim 1 , wherein the align control signal generation unit generates the plurality of align control signals by dividing a frequency of the data strobe signal by 2 after determining whether or not a data is inputted according to the write flag signal. 
   
   
     3. The semiconductor memory device as recited in  claim 1 , wherein the output unit includes: a first NAND gate for receiving the main output of the dividing unit and the data strobe signal in order to generate the first align control signal; a first inverter for inverting the first align control signal in order to generate the second align control signal; a second NAND gate for receiving the sub output of the dividing unit and the data strobe signal in order to generate the third align control signal; and a second inverter for inverting the third align control signal in order to generate the fourth align control signal. 
   
   
     4. The semiconductor memory device as recited in  claim 3 , wherein the dividing unit includes: a first transfer gate for transferring a voltage loaded on a first node to a second node in response to an activation of the data strobe signal; a second transfer gate for transferring a voltage loaded on the second node to a third node in response to an activation of the data strobe signal; a third NAND gate for receiving a voltage loaded on the third node and the write flag signal; a third inverter for inverting an output of the third NAND gate; a third transfer gate for transferring an output of the third inverter to the third node in response to an inactivation of the data strobe signal; a fourth transfer gate for transferring an output of the third NAND gate to the first node in response to an inactivation of the data strobe signal; a fourth inverter for inverting a voltage loaded on the first node; a fifth inverter for inverting an output of the fourth inverter to thereby output the inverted signal to the second node; a sixth inverter for inverting an output of the fourth inverter; a first delay unit for delaying an output of the sixth inverter to thereby generate the main output; and a second delay unit for delaying an output of the fourth inverter to thereby generate the sub output. 
   
   
     5. The semiconductor memory device as recited in  claim 4 , wherein the main output and the sub output of the dividing unit are initialized as a logic high level and a logic low level respectively before an activation of the write flag signal. 
   
   
     6. The semiconductor memory device as recited in  claim 5 , wherein the data align unit includes: a first and a second drivers for providing a data and an inverted data; a first flip-flop for receiving the outputs of the first and the second drivers in order to output a main output and a sub output in response to the first align control signal; a second flip-flop for receiving the outputs of the first and the second drivers in order to output a main output and a sub output in response to the second align control signal; a third flip-flop for receiving the outputs of the first and the second drivers in order to output a main output and a sub output in response to the third align control signal; a fourth to a sixth flip-flops for receiving each main output and sub output of the first to the third flip-flops respectively in response to the fourth align control signal; a seventh flip-flop for receiving the outputs of the first and the second drivers in order to output a main output and a sub output in response to the fourth align control signal; and a third to a sixth drivers for outputting main outputs of the fourth to the seven flip-flops as the first to the fourth align data respectively.