Semiconductor device package of stacked semiconductor chips with spacers provided therein

Abstract

A semiconductor device package includes a plurality of stacked semiconductor chips and a spacer interposed therebetween. The spacer includes a first spacer and a second spacer stacked on one another. The first and the second spacers have different principal surfaces. If the second spacer has a larger principal surface than the first spacer, flexure of the upper semiconductor chip can be avoided.

1. A semiconductor device package comprising:
 a plurality of semiconductor chips stacked on one another; and 
 a spacer interposed between the plurality of semiconductor chips, the spacer at least comprising a first spacer and a second spacer placed above the first spacer, 
 wherein the first spacer and the second spacer have different principal surface areas, and 
 wherein the first spacer and the second spacer are each formed of a silicon wafer. 
 
     
     
       2. The semiconductor device package of  claim 1 , wherein the second spacer has a larger principal surface than the first spacer. 
     
     
       3. The semiconductor device package of  claim 1 , wherein the first spacer has a larger principal surface than the second spacer. 
     
     
       4. The semiconductor device package of  claim 1 , wherein a total thickness of the first spacer and the second spacer is a thickness required for wire bonding of a semiconductor chip located below the spacer. 
     
     
       5. The semiconductor device package of  claim 1 , wherein a thickness of the first spacer is a thickness required for wire bonding of a semiconductor chip located below the first spacer. 
     
     
       6. The semiconductor device package of  claim 5 , wherein the first spacer and the second spacer have substantially the same thickness. 
     
     
       7. The semiconductor device package of  claim 1 , wherein either one of the first spacer and the second spacer is thinner than one of the plurality of semiconductor chips. 
     
     
       8. The semiconductor device package of  claim 7 , wherein the first spacer and the second spacer have substantially the same thickness. 
     
     
       9. The semiconductor device package of  claim 1 , wherein the second spacer has a larger principal surface than a semiconductor chip placed above the second spacer. 
     
     
       10. The semiconductor device package of  claim 9 , wherein an electromagnetic wave shielding film is formed on at least all over one surface of the second spacer. 
     
     
       11. The semiconductor device package of  claim 10 , wherein the electromagnetic wave shielding film is an aluminum film. 
     
     
       12. The semiconductor device package of  claim 1 , further comprising a substrate attached to a semiconductor chip placed lowest of the plurality of semiconductor chips, and having electrodes connected to electrodes formed on peripheral areas of the plurality of semiconductor chips by wire bonding. 
     
     
       13. A semiconductor device package, comprising:
 a first semiconductor chip; 
 a first spacer mounted on said first semiconductor chip; 
 a second spacer mounted on said first spacer; 
 a second semiconductor chip mounted on said second spacer; 
 a first bonding layer intervening between said first semiconductor chip and said first spacer and bonding said first spacer to said first semiconductor chip; and 
 a second bonding layer intervening between said second spacer and said second semiconductor chip and bonding said second semiconductor chip to said second spacer. 
 
     
     
       14. The semiconductor device according to  claim 13 , further comprising:
 a third bonding layer intervening between said first spacer and said second spacer and bonding said second spacer to said first spacer.