Image displaying device and method for manufacturing same

Abstract

A technique for improving the manufacturing yield of an image displaying device is disclosed. A fabrication method of the image displaying device includes the steps of forming on an insulative substrate a plurality of island-like semiconductor layers, forming a gate insulating film on the island-like semiconductor layers, defining more than one contact hole in the gate insulating film, forming a gate electrode on the gate insulator film for causing the island-like semiconductor layer to be in contact with the gate insulator film, forming a source region, a drain region and a channel region interposed therebetween in the island-like semiconductor layer, forming an interlayer dielectric (ILD) film on the gate electrode, forming source/drain electrodes contacted with the source and drain regions and the ILD film, defining a through-hole(s) after formation of the source/drain electrodes, and removing a contact portion of the island-like semiconductor layer and gate electrode.

1. An image displaying device having on an insulative substrate a plurality of thin film transistors, wherein each of said thin film transistors comprises an island-like semiconductor layer with a source region, a drain region and a channel region interposed therebetween, a gate insulating film layer as formed between the island-like semiconductor layer and a gate electrode layer, and an interlayer dielectric film layer formed on or above said gate electrode layer, wherein each said thin film transistor has a through-hole, and wherein a cross-section of the through-hole has said interlayer dielectric film layer and said gate electrode layer. 
     
     
       2. The image displaying device according to  claim 1 , wherein the cross-section of said through-hole includes said interlayer dielectric film layer, said gate electrode layer, said gate insulating film layer, and said island-like semiconductor layer. 
     
     
       3. The image displaying device according to  claim 1 , further comprising a capacitive element above said substrate, wherein said capacitive element has said island-like semiconductor layer, said gate insulating film layer and said gate electrode layer and wherein said capacitive element also has a through-hole. 
     
     
       4. The image displaying device according to  claim 3 , wherein a cross-section of said through-hole is comprised of said interlayer dielectric film layer, said gate electrode layer, said gate insulating film layer, and said island-like semiconductor layer. 
     
     
       5. An image displaying device having on an insulative substrate a plurality of thin film transistors, wherein each of said thin film transistors comprises an island-like semiconductor layer with a source region, a drain region and a channel region interposed therebetween, a gate insulating film layer as formed between the island-like semiconductor layer and a gate electrode layer, an interlayer dielectric film layer formed on or above said gate electrode layer, and a passivating insulating film layer as formed on said interlayer dielectric film layer, wherein each said thin film transistor has a through-hole, and wherein a cross-section of the through-hole has said passivating insulating film layer, said interlayer dielectric film layer and said gate electrode layer. 
     
     
       6. The image displaying device according to  claim 5 , wherein the cross-section of said through-hole includes said passivating insulating film layer, said interlayer dielectric film layer, said gate electrode layer, said gate insulating film layer, and said island-like semiconductor layer. 
     
     
       7. The image displaying device according to  claim 5 , further comprising a capacitive element above said substrate, wherein said capacitive element has said island-like semiconductor layer, said gate insulating film layer and said gate electrode layer and wherein said capacitive element also has a through-hole. 
     
     
       8. The image displaying device according to  claim 7 , wherein a cross-section of said through-hole is comprised of said passivating insulating film layer, said interlayer dielectric film layer, said gate electrode layer, said gate insulating film layer, and said island-like semiconductor layer.