Electro-optical device, manufacturing method thereof, and electronic apparatus

Abstract

The disclosure is directed to an electro-optical device and manufacturing method. In one example, a storage capacitor is disposed above a data line. The storage capacitor has a stacked structure of a fixed-potential electrode, a dielectric layer, and a pixel-potential electrode. The storage capacitor is disposed in an area including a region opposed to a channel region of a pixel-switching thin film transistor. A peripheral circuit is disposed in a peripheral area located around a pixel array area. The peripheral circuit includes a peripheral-circuit thin film transistor. The dielectric layer includes a peripheral dielectric layer area having a region opposed to the channel region of the peripheral-circuit thin film transistor.

1. An electro-optical device including a pixel array area in which are arranged a plurality of pixels, the electro-optical device comprising:
 a data line and a scanning line extending to intersect each other on a substrate; 
 a pixel-switching thin film transistor disposed in the pixel that corresponds to an intersection of the data line and the scanning line, the pixel-switching thin film transistor being disposed below the data line on the substrate; 
 a storage capacitor, in plan view, being disposed above the data line and having a stacked structure of a fixed-potential electrode, a dielectric layer, and a pixel-potential electrode, the fixed-potential electrode and the pixel-potential electrode being separate layers that sandwich the dielectric layer, and the storage capacitor being disposed in an area including a region opposed to a channel region of the pixel-switching thin film transistor; 
 a pixel electrode electrically connected to the pixel-potential electrode and the pixel-switching thin film transistor, the pixel electrode being disposed above the storage capacitor; 
 a peripheral circuit for driving the pixel electrode through the data line and the scanning line, the peripheral circuit being disposed in a peripheral area located around the pixel array area, the peripheral circuit including a peripheral-circuit thin film transistor having a channel region; and 
 the dielectric layer including a peripheral dielectric layer area having, in plan view, a region opposed to the channel region of the peripheral-circuit thin film transistor. 
 
   
   
     2. The electro-optical device according to  claim 1 , wherein the dielectric layer includes a slit in the peripheral dielectric layer area. 
   
   
     3. The electro-optical device according to  claim 2 , wherein the peripheral dielectric layer has an edge and a peripheral circuit area and a plurality of slits, and at least some of the slits are formed between the edge of the peripheral dielectric layer area and the peripheral circuit area and between the pixel array area and the peripheral circuit area as seen in plan view. 
   
   
     4. The electro-optical device according to  claim 2 , further including a plurality of slits and wherein at least some of the slits extend to, and are cut-in from, the edge of the peripheral dielectric layer area. 
   
   
     5. An electronic apparatus comprising the electro-optical device according to  claim 1 . 
   
   
     6. A method of manufacturing an electro-optical device having a pixel array area in which are arranged a plurality of pixels, the method comprising:
 forming a pixel-switching thin film transistor for each pixel, each pixel-switching thin film transistor having a channel region; 
 forming a peripheral-circuit thin film transistor in a peripheral circuit, each peripheral-circuit thin film transistor having a channel region; 
 forming data lines above the pixel-switching thin film transistor; 
 forming a storage capacitor above the data lines in an area including a region opposed to the channel region of the pixel-switching thin film transistor in plan view, the storage capacitor having a stacked structure of a fixed-potential electrode, a dielectric layer, and a pixel-potential electrode, and the dielectric layer being formed in a non-opened area between opened areas of the pixels and an area including a region opposed to the channel region of the peripheral-circuit thin film transistor; and 
 forming a pixel electrode above the storage capacitor for electrically connecting each pixel to the pixel-switching thin film transistor and the pixel-potential electrode. 
 
   
   
     7. The electro-optical device according to  claim 1 , wherein the dielectric layer includes a non-opened area located between opened areas of the pixels. 
   
   
     8. The electro-optical device according to  claim 1 , wherein the dielectric layer is disposed in an area as wide as reasonably possible in the peripheral area located around the pixel array area. 
   
   
     9. An electro-optical device comprising:
 data lines and scanning lines extending to intersect each other on a substrate; 
 a pixel-switching thin film transistor disposed in pixels that correspond to an intersection of the data lines and the scanning lines, the pixel-switching thin film transistor being disposed below the data lines on the substrate; 
 a storage capacitor having a stacked structure of a fixed-potential electrode, a dielectric layer, and a pixel-potential electrode, and the storage capacitor, in plan view, being disposed in an area including a region opposed to a channel region of the pixel-switching thin film transistor and being disposed above the data lines; 
 a pixel electrode electrically connected to the pixel-potential electrode and the pixel-switching thin film transistor, the pixel electrode being disposed above the storage capacitor for each pixel; 
 a peripheral circuit for driving the pixel electrode through the data lines and the scanning lines, the peripheral circuit being disposed in a peripheral area located around a pixel array area in which the pixels are arranged and including a peripheral-circuit thin film transistor having a channel region that is disposed below the storage capacitor; and 
 wherein, in plan view, the dielectric layer includes 
 a non-opened area located between opened areas of the pixels and 
 a peripheral dielectric layer area having slits and a region opposed to the channel region of the peripheral-circuit thin film transistor. 
 
   
   
     10. The electro-optical device according to  claim 9 , wherein the slits are formed between edges of the peripheral dielectric layer area and a peripheral circuit area in which the peripheral circuit is disposed, and between edges of the pixel array area and the peripheral circuit area, as seen in plan view. 
   
   
     11. The electro-optical device according to  claim 9 , wherein the slits extend to, and are cut-in, from edges of the peripheral dielectric layer area. 
   
   
     12. The electro-optical device according to  claim 9 , wherein the dielectric layer is disposed in an area as wide as reasonably possible in the peripheral area located around the pixel array area.