Photonic mixer device

Abstract

The present invention relates to a photonic mixer device with a photosensitive layer, at least two modulation gates ( 3, 4, 103, 104, 203, 204, 303, 304, 403, 404 ) and at least two readout electrodes ( 1, 2, 101, 102, 201, 202, 301, 302, 401, 402, 501, 502, 601, 602 ) connected to the photosensitive layer, the modulation gates ( 3, 4, 103, 104, 203, 204, 303, 304, 403, 404 ) being able to be connected to a modulation device which raises and lowers the potential of the modulation gates relative to one another and relative to the preferably constant potential of the readout electrodes corresponding to a desired modulation function. In order to further develop the known photonic mixer device such that it shows an increased charge conversion efficiency and reduced dark currents, it is proposed according to the invention that the readout electrodes ( 1, 2, 101, 102, 201, 202, 301, 302, 401, 402, 501, 502, 601, 602 ) in each case have at least two discrete electrode sections ( 1 A- 1 E, 2 A- 2 E) arranged at a distance alongside each other.

1. Photonic mixer device for receiving incident electromagnetic radiation includes a photosensitive layer ( 105 ) responsive to the incident electromagnetic radiation, at least two modulation gates ( 3 ,  4 ,  103 ,  104 ,  203 ,  204 ,  303 ,  304 ,  403 ,  404 ) and at least two readout electrodes ( 1 ,  2 ,  101 ,  102 ,  201 ,  202 ,  301 ,  302 ,  401 ,  402 ,  501 ,  502 ,  601 ,  602 ) connected to the photosensitive layer, the modulation gates ( 3 ,  4 ,  103 ,  104 ,  203 ,  204 ,  303 ,  304 ,  403 ,  404 ) being able to be connected to a modulation device which raises and lowers the potential of the modulation gates relative to one another and relative to a constant potential of the readout electrodes corresponding to a desired modulation function, characterized in that the readout electrodes ( 1 ,  2 ,  101 ,  102 ,  201 ,  202 ,  301 ,  302 ,  401 ,  402 ,  501 ,  502 ,  601 ,  602 ) each have at least two discrete electrode sections ( 1 A- 1 E,  2 A- 2 E) arranged at a distance alongside each other, characterized in that at least two memory gates ( 323 ,  324 ) are provided which surround the readout electrodes ( 301 ,  302 ). 
   
   
     2. Photonic mixer device according to  claim 1 , characterized in that the memory gates ( 323 ,  324 ,  423 ,  424 ) are strip-shaped. 
   
   
     3. Photonic mixer device according to  claim 1 , characterized in that the memory gates ( 323 ,  324 ,  423 ,  424 ) are covered by a material that is not transparent for the incident electromagnetic radiation. 
   
   
     4. Photonic mixer device according to  claim 1 , characterized in that the memory gates ( 323 ,  324 ,  423 ,  424 ) are electrically isolated from the readout electrodes ( 301 ,  302 ,  401 , 402 ). 
   
   
     5. Photonic mixer device according to  claim 1 , characterized in that the memory gates ( 323 ,  324 ,  423 ,  424 ) are electrically isolated from the photosensitive layer. 
   
   
     6. Photonic mixer device according to  claim 1 , characterized in that the memory gates ( 323 ,  324 ,  423 ,  424 ) are connected to an adjustable voltage source. 
   
   
     7. Photonic mixer device according to  claim 1 , characterized in that the memory gates ( 323 ,  324 ,  423 ,  424 ) are biased with a voltage. 
   
   
     8. Photonic mixer device according to  claim 1 , characterized in that the memory gates ( 323 ,  324 ,  423 ,  424 ,  531 ,  532 ,  633 ) each form a separation gate. 
   
   
     9. Photonic mixer device according to  claim 1 , characterized in that the memory gates ( 323 ,  324 ,  423 ,  424 ) lie on a different potential from the readout electrodes ( 301 ,  302 ,  401 ,  402 ). 
   
   
     10. Photonic mixer device according to  claim 1 , characterized in that two neighbouring mixer elements ( 613 ,  614 ,  615 ) have a common memory gate ( 633 ). 
   
   
     11. Photonic mixer device according to  claim 1 , characterized in that the photonic mixer has at least one memory structure. 
   
   
     12. Photonic mixer device according to  claim 11 , characterized in that each memory structure has at least one readout electrode ( 427 ,  428 ) with a memory gate ( 425 ,  426 ) surrounding each readout electrode wherein the readout electrodes ( 427 ,  428 ) of each memory structure have discrete electrode sections electrically connected to each other, wherein the discrete electrode sections of the readout electrodes ( 427 ,  428 ) are electrically isolated from each memory gate ( 425 ,  426 ), wherein each memory structure is covered by a layer that is not transparent for the incident electromagnetic radiation, and wherein the readout electrodes ( 427 ,  428 ) of each memory structure are electrically connected to the readout electrodes ( 401 , 402 ) of the mixer elements. 
   
   
     13. Photonic mixer device according to  claim 12 , characterized in that two memory structures are provided per mixer element. 
   
   
     14. Photonic mixer device according to  claim 12 , characterized in that two neighbouring mixer elements of the adjacent mixer elements have a common memory structure. 
   
   
     15. Photonic mixer device according to  claim 12 , characterized in that the memory gates ( 425 ,  426 ) of each memory structure are connected to a second adjustable voltage source. 
   
   
     16. Photonic mixer device according to  claim 12 , characterized in that the memory gates ( 423 ,  424 ) of each adjacent mixer element lie on a different potential from the memory gates ( 425 ,  426 ) of each memory structure. 
   
   
     17. Photonic mixer device according to  claim 12 , characterized in that the memory gates ( 425 ,  426 ) of each memory structure structures lie on a lower potential than the memory gates ( 423 ,  424 ) of each adjacent mixer element and lie on a higher potential than the readout electrodes ( 401 ,  402 ) of each adjacent mixer element. 
   
   
     18. Photonic mixer device according to  claim 7 , characterized in that the voltage is a positive voltage. 
   
   
     19. Photonic mixer device according to  claim 7 , characterized in that the voltage is a negative voltage.