Scintillator detector fabrication

Abstract

The present invention provides methods for selectively forming a scintillator layer on a substrate as well as related devices. The method includes positioning an electrostatic dissipative organic resin layer on a first portion of a substrate surface, and depositing scintillator material on both the resin layer and a second portion of the substrate surface. The method further includes removing the resin layer from the substrate as to remove from the substrate scintillator material deposited on the resin layer while leaving scintillator material on the second portion of the substrate.

1. A method for selectively forming a scintillator layer on a substrate, comprising:
 positioning an electrostatic dissipative organic resin layer on a first portion of a substrate surface; 
 depositing scintillator material on both the resin layer and a second portion of the substrate surface; 
 removing the resin layer from the substrate as to remove from the substrate scintillator material deposited on the resin layer while leaving scintillator material on the second portion of the substrate. 
 
   
   
     2. The method of  claim 1 , wherein the resin layer comprises a melting temperature greater than about 300 degrees F. 
   
   
     3. The method of  claim 1 , wherein the resin layer comprises a melting temperature greater than about 500 degrees F. 
   
   
     4. The method of  claim 1 , wherein the resin layer comprises a polyimide polymer. 
   
   
     5. The method of  claim 1 , wherein positioning the resin layer comprises binding the resin layer to the substrate surface with a weak adhesive. 
   
   
     6. The method of  claim 1 , wherein the substrate comprises a photodetector. 
   
   
     7. The method of  claim 1 , wherein the scintillator material comprises CsI(Tl). 
   
   
     8. A method for selectively forming a scintillator layer on a substrate, comprising:
 positioning a polyimide resin layer on a first portion of a substrate surface; 
 depositing scintillator material on both the polyimide layer and a second portion of the substrate surface; 
 removing the polyimide layer from the substrate as to remove from the substrate scintillator material deposited on the polyimide layer while leaving scintillator material on the second portion of the substrate. 
 
   
   
     9. The method of  claim 8 , wherein the resin layer comprises a melting temperature greater than about 300 degrees F. 
   
   
     10. The method of  claim 8 , wherein the resin layer comprises a melting temperature greater than about 500 degrees F. 
   
   
     11. The method of  claim 8 , wherein positioning the resin layer comprises binding the resin layer to the substrate surface with a weak adhesive. 
   
   
     12. The method of  claim 8 , wherein the substrate comprises a photodetector. 
   
   
     13. The method of  claim 8 , wherein the scintillator material comprises CsI(Tl). 
   
   
     14. A radiation detection device, comprising:
 a substrate having a masking layer removably positioned on a first portion of a surface of the substrate, the masking layer comprising an electrostatic dissipative organic resin; and 
 a scintillator material deposited on the masking layer and a second portion of the substrate surface, wherein removal of the masking layer from the substrate removes from the substrate scintillator material deposited on the masking layer while leaving scintillator material on the second portion of the substrate. 
 
   
   
     15. The device of  claim 14 , wherein the resin layer comprises a melting temperature greater than about 300 degrees F. 
   
   
     16. The device of  claim 14 , wherein the resin layer comprises a melting temperature greater than about 500 degrees F. 
   
   
     17. The device of  claim 14 , wherein the resin layer comprises a polyimide polymer. 
   
   
     18. The device of  claim 14 , wherein positioning the resin layer comprises binding the resin layer to the substrate surface with a weak adhesive. 
   
   
     19. The device of  claim 14 , wherein the substrate comprises a photodetector. 
   
   
     20. The device of  claim 14 , wherein the scintillator material comprises CsI(Tl).