US7368172B2ExpiredUtilityPatentIndex 74

Membrane multi-layer structure, and actuator element, capacitive element and filter element using the same

Assignee: FUJITSU LTDPriority: Jun 11, 2003Filed: Apr 27, 2004Granted: May 6, 2008

Est. expiryJun 11, 2023(expired)· nominal 20-yr term from priority

H10P 14/69215H10P 14/6939H10P 14/6309H10P 14/69395H10P 14/6349H10P 14/662H10P 14/69398C30B 29/22H03H 9/02574C30B 23/02H10N 30/079H10N 30/2047H10N 30/078H10N 30/8554H10N 30/708

PatentIndex Score

Cited by

References

Claims

Abstract

By performing epitaxial growth on a semiconductor substrate while keeping conformity, a membrane multi-layer structure showing increased polarization is provided. A membrane multi-layer structure comprising a thin layer composed of zirconium oxide as the main component for allowing epitaxial growth, a thin layer having a simple perovskite structure, showing in-plane rotation by 45° of the (001) plane to the thin layer composed of zirconium oxide as the main component and performing epitaxial growth, and an intermediate layer provided between the thin layer composed of zirconium oxide as the main component and the thin layer having a simple perovskite structure.

Claims

exact text as granted — not AI-modified

1. A membrane multi-layer, comprising:
 a semiconductor substrate having the (001) plane, 
 a first thin layer comprising zirconium oxide as a main component formed on or over the semiconductor substrate, having a second (001) plane corresponding to the first (001) plane; and 
 a second thin layer, having a simple perovskite structure formed on or over the first thin layer, having a third (001) plane rotated by 45° with respect to the first (001) plane, formed by epitaxial growth. 
 
     
     
       2. A membrane multi-layer structure, comprising:
 a semiconductor substrate having the (001) plane, 
 a first thin layer comprising zirconium oxide as a main component formed on or over the semiconductor substrate, having a second (001) plane corresponding to the first (001) plane; and 
 a second thin layer, having a simple perovskite structure formed on or over the first thin layer, having a third (001) plane rotated by 45° with respect to the first (001) plane, formed by epitaxial growth; and 
 an intermediate layer formed between the first and the second layer. 
 
     
     
       3. A membrane multi-layer structure according to  claim 1  or  2 , wherein the semiconductor substrate is made of silicon. 
     
     
       4. A membrane multi-layer structure according to  claim 1  or  2 , wherein the first layer comprises alkaline earth metals or light rare earth metals. 
     
     
       5. A membrane multi-layer structure according to  claim 1  or  2 , further comprising a metal layer comprising one selected from the group consisting of platinum group metal, formed on the second layer by epitaxial growth. 
     
     
       6. A membrane multi-layer structure according to  claim 2 , wherein the intermediate layer has a crystal structure having a crystal lattice, in which a cation is present at the corner and an anion is present at the center of the edge of the crystal lattice. 
     
     
       7. A membrane multi-layer structure according to  claim 2 , wherein the intermediate layer has a rock salt structure. 
     
     
       8. A membrane multi-layer structure according to  claim 7 , wherein the intermediate layer comprises at least one oxide selected from the group consisting of magnesium oxide, calcium oxide, barium oxide and strontium oxide. 
     
     
       9. A membrane multi-layer structure according to  claim 1 ,  2  or  8 , wherein the second layer comprises at least one oxide selected from the group consisting of SrRuO 3 , CaRuO 3 , LaNiO 3 , (La x Si 1-x )CoO 3  (wherein, 0&lt;x&lt;1), CaTiO 3 , (Ba x Sr 1-x )TiO 3  (wherein, 0&lt;x&lt;1). 
     
     
       10. A membrane multi-layer structure according to  claim 1 ,  2  or  8 , further comprising a thin layer having a simple perovskite structure on the second layer having a piezoelectric effect or electrostriction effect. 
     
     
       11. A membrane multi-layer structure according to  claim 10 , wherein the thin layer having a piezoelectric effect or electrostriction effect comprises at least one or more oxides selected from the group consisting of Pb(Zr 1-x Ti x )O 3  (0&lt;x&lt;1), (Pb 1-y La y )(Zr 1-x Ti x )O 3  ( 0&lt;x, y&lt;1), Pb(B′ 0.33 B″ 0.67 ) x Ti y Zr 1-x-y O 3  (0&lt;x, y&lt;1, B′ represents a divalent transition metal and B″ represents a penta-valent transition metal), Pb(B′ 0.5 B″ 0.5 ) x Ti y Zr 1-x-y O 3  ( 0&lt;x, y&lt;1, B′ represents a tri-valent transition metal and B″ represents a penta-valent transition metal) and Pb(B′ 0.33 B″ 0.67 ) x Ti y Zr 1-x-y O 3  (0&lt;x, y&lt;1, B′ represents a hexa-valent transition metal and B″ represents a tri-valent transition metal). 
     
     
       12. A membrane multi-layer structure according to  claim 1 ,  2  or  8 , further comprising a thin layer having a tungsten bronze structure on the second layer. 
     
     
       13. A membrane multi-layer structure according to  claim 12 , wherein the thin layer having a tungsten bronze structure contains at least one oxide selected from the group consisting of (Sr x Ba 1-x )Nb 2 O 6  (wherein, 0&lt;x&lt;1), (Sr 1-x Ba x )Ta 2 O 6  (wherein, 0&lt;x&lt;1), PbNb 2 O 6 , Ba 2 NaNb 5 O 15  and (Ba x Sr 1-x )TiO 3  (wherein, 0&lt;x&lt;1). 
     
     
       14. A membrane multi-layer structure according to  claim 1 ,  2  or  8 , further comprising a thin layer having a bismuth layer structure on the second layer. 
     
     
       15. A membrane multi-layer structure according to  claim 14 , wherein the thin layer having a bismuth layer structure contains at least one oxide selected from the group consisting of (Bi 1-x R x ) 4 Ti 3 O 12  (wherein, R represents a light rare earth metal including Y and Sc, &lt;0x&lt;1), SrBi 2 Ta 2 O 9  and SrBi 4 Ti 4 O 15 . 
     
     
       16. A membrane multi-layer structure according to  claim 1 ,  2  or  8 , further comprising an insulating thin layer between the semiconductor substrate and the first thin layer. 
     
     
       17. A membrane multi-layer structure according to  claim 16 , wherein the insulating thin layer is a silicon thermal oxidation layer. 
     
     
       18. An actuator element comprising the membrane multi-layer structure according to  claim 1  or  2 . 
     
     
       19. A capacitive element comprising the membrane multi-layer structure according to  claim 1  or  2 . 
     
     
       20. A filter element comprising the membrane multi-layer structure according to  claim 1  or  2 .

Cited by (0)

No later patents cite this yet.

References (0)

No backward citations on record.