Semiconductor device and manufacturing method of the same

Abstract

Patterning is performed in such a manner that an end portion fabricated of a second gate insulating film partially overlaps an end portion fabricated of a first gate insulating film. Then, a surface recovery treatment is performed in the aforementioned state where the first and second gate insulating films partially overlap each other.

1. A manufacturing method of a semiconductor device, comprising the steps of:
 subjecting a surface of a semiconductor substrate to element isolation to demarcate a first active region and a second active region; 
 forming a first gate insulating film on the first active region and the second active region; 
 fabricating the first gate insulating film and leaving the first gate insulating film in such a manner that an end portion fabricated of the first gate insulating film is located on any portion other than a first gate electrode forming region in the first active region and a second gate electrode forming region in the second active region; 
 forming a second gate insulating film on the first active region and the second active region, including on the first gate insulating film; 
 fabricating the second gate insulating film and leaving the second gate insulating film in such a manner that an end portion fabricated of the second gate insulating film overlaps the end portion fabricated of the first gate insulating film; 
 simultaneously subjecting a surface of the first gate insulating film and a surface of the second gate insulating film to a surface recovery treatment; and 
 pattern-forming a first gate electrode on the first gate electrode forming region with the first gate insulating film therebetween and a second gate electrode on the second gate electrode forming region with the second gate insulating film therebetween, respectively. 
 
     
     
       2. The manufacturing method of the semiconductor device according to  claim 1 , wherein the surface recovery treatment is a nitriding treatment. 
     
     
       3. The manufacturing method of the semiconductor device according to  claim 2 , wherein the nitriding treatment is one treatment selected from the group consisting of a treatment by a plasma nitriding method and a treatment by an NH 3  annealing method. 
     
     
       4. The manufacturing method of the semiconductor device according to  claim 1 , wherein the surface recovery treatment is an oxynitriding treatment. 
     
     
       5. The manufacturing method of the semiconductor device according to  claim 4 , wherein the oxynitriding treatment is one treatment selected from the group consisting of a series of treatments by a plasma nitriding method and an O 2  annealing method, a treatment by an NO annealing method, and a series of treatments by an NH 3  annealing method and the O 2  annealing method. 
     
     
       6. The manufacturing method of the semiconductor device according to  claim 1 , wherein said step of fabricating the first gate insulating film, the first gate insulating film is fabricated in such a manner that the end portion fabricated of the first gate insulating film is located on the any portion and located on the first active region or on the second active region. 
     
     
       7. The manufacturing method of the semiconductor device according to  claim 1 , wherein one of the first gate insulating film and the second gate insulating film is a film made of a silicon oxide or a silicon oxynitride and the other is a film made of a high dielectric constant material. 
     
     
       8. The manufacturing method of the semiconductor device according to  claim 7 , wherein the high dielectric constant film is an oxide or an oxynitride of one kind or two or more kinds of metals selected from the group consisting of Hf, Zr, Si, Al, and Ta. 
     
     
       9. The manufacturing method of the semiconductor device according to  claim 1 , further comprising the step of subjecting the first active region and the second active region to a salicide treatment. 
     
     
       10. The manufacturing method of the semiconductor device according to  claim 1 , further comprising the steps of, prior to the surface recovery treatment:
 subjecting an entire surface of the first gate insulating film to a preliminary surface recovery treatment after the first gate insulating film is formed and before the first gate insulating film is fabricated; and 
 subjecting an entire surface of the second gate insulating film to a preliminary surface recovery treatment after the second gate insulating film is formed and before the second gate insulating film is fabricated. 
 
     
     
       11. The manufacturing method of the semiconductor device according to  claim 10 , wherein each of the preliminary surface recovery treatments is a nitriding treatment. 
     
     
       12. The manufacturing method of the semiconductor device according to  claim 11 , wherein the nitriding treatment is one treatment selected from the group consisting of a treatment by a plasma nitriding method and a treatment by an NH 3  annealing method. 
     
     
       13. The manufacturing method of the semiconductor device according to  claim 10 , wherein each of the preliminary surface recovery treatments is an oxynitriding treatment. 
     
     
       14. The manufacturing method of the semiconductor device according to  claim 13 , wherein the oxynitriding treatment is one treatment selected from the group consisting of a series of treatments by a plasma nitriding method and an O 2  annealing method, a treatment by an NO annealing method, and a series of treatments by an NH 3  annealing method and the O 2  annealing method.