Semiconductor device containing stacked semiconductor chips and manufacturing method thereof

Abstract

An adhesive film is formed on an electrode film, and a coating film is formed thereon. Nickel, chrome, molybdenum, tungsten, aluminum or an alloy of them is used as a constituent material of the adhesive film. Gold, silver, platinum or an alloy of them is used as a constituent material of the coating film.

1. A semiconductor device comprising:
 a base material; 
 a conductor circuit in the base material; 
 a dielectric film covering at least part of the base material; 
 a pad electrode on a surface of the base material or a surface of the dielectric film and connected with the conductor circuit; 
 a semiconductor chip on the dielectric film; 
 a conductive member electrically connecting the pad electrode and the semiconductor chip, 
 wherein the pad electrode comprises an electrode film and a conductive protective film on a surface of the electrode film, 
 wherein one end of the conductive member contacts the conductive protective film and 
 wherein the surface of the dielectric film is a plasma treated surface, and the surface of the conductive protective film comprises a plasma-resistant material. 
 
     
     
       2. The semiconductor device of  claim 1 , wherein the conductive protective film comprises an adhesive film formed on the electrode film, and a coating film formed on the adhesive film, which constitutes the surface of the conductive protective film. 
     
     
       3. A semiconductor device comprising:
 a base material; 
 a conductor circuit provided in the base material; 
 a dielectric film covering at least a part of the base material; 
 a pad electrode provided on a surface of the base material or a surface of the dielectric film and connected with the conductor circuit; 
 a semiconductor chip formed on the dielectric film; and 
 a conductive member electrically connecting the pad electrode and the semiconductor chip, wherein the pad electrode comprises an electrode film and a conductive protective film formed on a surface of the electrode film, the conductive member is formed so that one end thereof contacts with the conductive protective film, and a cluster of micro projections is formed on the surface of the dielectric film. 
 
     
     
       4. The semiconductor device of  claim 1 , wherein a cluster of micro projections is formed on the surface of the dielectric film. 
     
     
       5. The semiconductor device of  claim 3 , wherein the conductive protective film comprises an adhesive film formed on the electrode film, and a coating film formed on the adhesive film, which constitutes the surface of the conductive protective film. 
     
     
       6. The semiconductor device of  claim 3 , wherein the surface of the dielectric film is a plasma treated surface and the surface of the conductive protective film comprises a plasma-resistant material. 
     
     
       7. The semiconductor device of  claim 3 , wherein the dielectric film has a concave part, the pad electrode is formed inside the concave part, and there is a gap between the inside wall of the concave part and the side wall of the pad electrode. 
     
     
       8. A semiconductor device comprising:
 a base material; 
 a conductor circuit provided in the base material; 
 a dielectric film covering at least a part of the base material; 
 a pad electrode provided on a surface of the base material or a surface of the dielectric film and connected with the conductor circuit; 
 a semiconductor chip formed on the dielectric film; and 
 a conductive member electrically connecting the pad electrode and the semiconductor chip, wherein the pad electrode comprises an electrode film and a conductive protective film formed on a surface of the electrode film, the conductive member is formed so that one end thereof contacts with the conductive protective film, and the conductive protective film comprises an adhesive film formed on the electrode film, and a coating film formed on the adhesive film, which constitutes the surface of the conductive protective film. 
 
     
     
       9. The semiconductor device of  claim 8 , wherein the surface of the dielectric film is a plasma treated surface and the surface of the conductive protective film comprises a plasma-resistant material. 
     
     
       10. The semiconductor device of  claim 8 , wherein the dielectric film has a concave part, the pad electrode is formed inside the concave part, and there is a gap between the inside wall of the concave part and the side wall of the pad electrode. 
     
     
       11. The semiconductor device of  claim 8 , wherein a cluster of micro projections is formed on the surface of the dielectric film. 
     
     
       12. The semiconductor device of  claim 8 , wherein the adhesive film is selected from a group consisting of Ni, Cr, Mo, W and Al. 
     
     
       13. The semiconductor device of  claim 8 , wherein the coating film is selected from a group consisting of Au, Ag and Pt.