Pixel structure

Abstract

A method for fabricating a pixel structure is provided. First, a gate, a scan line, and a first terminal are formed on a substrate. A gate insulating layer is formed over the substrate to cover the gate, the scan line, and the first terminal. After defining the semiconductor layer, the gate insulating layer is patterned to exposure the first terminal. A transparent conductive layer is formed over the substrate and a patterned photoresist layer is formed on the transparent conductive layer. The transparent conductive layer is patterned using the patterned photoresist layer as a mask, so as to define a source, a drain, a data line, a pixel electrode, a second terminal, and a contact pad. Because only four photomasks are used to implement the above method for fabricating the pixel structure, the cost of manufacturing can be reduced.

1. A pixel structure, comprising:
 a substrate, having a gate, a scan line electrically connected with the gate, and a first terminal electrically connected with the scan line at an edge of the substrate; 
 a gate insulating layer, covering the substrate; 
 a semiconductor layer, disposed on the gate insulating layer above the gate; 
 a source and a drain, disposed above the gate insulating layer and electrically connected with the semiconductor layer; 
 a data line, disposed above the gate insulating layer and electrically connected with the source; 
 a pixel electrode, disposed above the gate insulating layer and electrically connected with the drain; 
 a second terminal, disposed above the gate insulating layer and electrically connected with the data line; and 
 a contact pad, disposed above the gate insulating layer and electrically connected with the first terminal; 
 wherein, the source, the drain, the data line, the pixel electrode, the second terminal, and the contact pad are formed from a same film layer. 
 
   
   
     2. The pixel structure as claimed in  claim 1 , wherein a material of the source, the drain, the data line, the pixel electrode, the second terminal, and the contact pad comprise a transparent conductive material. 
   
   
     3. The pixel structure as claimed in  claim 1 , further comprising at least one protective layer disposed above the gate insulating layer. 
   
   
     4. The pixel structure as claimed in  claim 1 , further comprising a common line disposed on the substrate as a lower electrode of a pixel storing capacitor, and the pixel electrode above the common line is used as an upper electrode of the pixel storing capacitor.