Thermal interface material compound and method of fabricating the same

Abstract

A high thermal conductivity thermal interface material compound includes 53% by weight of polyethylene glycol, 42% by weight of silicon carbide, and 5% by weight of lithium ions. The method of fabricating the thermal interface material includes the steps of: filling the above-described compound in a container and blending them to form aggregative compound by a blender; mixing the compound by a rolling machine to disperse the aggregative compound and filling the compound to another container; blending the compound and breaking the air bubble generated thereof, and pumping the air out of the container by a vacuum pump at the same time, to fabricate the high thermal conductivity thermal interface material compound without air bubbles.

1. A high thermal conductivity thermal interface material compound including 53% by weight of polyethylene glycol, 42% by weight of silicon carbide, and 5% by weight of lithium ions. 
     
     
       2. The high thermal conductivity thermal interface material compound as claimed in  claim 1 , wherein the silicon carbide comprises particles in size of 130 nm and 6 μm. 
     
     
       3. The high thermal conductivity thermal interface material compound as claimed in  claim 2 , wherein the particles in size of 130 nm are 30% by weight in the silicon carbide, and the particles in size of 6 μm are 70% by weight in the silicon carbide. 
     
     
       4. A method of fabricating a high thermal conductivity thermal interface material comprising the steps of:
 a) providing 53% by weight of polyethylene glycol, 42% by weight of silicon carbide, and 5% by weight of lithium ions together to form a compound; 
 b) blending the compound to form aggregative compound; 
 c) mixing the compound to disperse the aggregative compound; 
 d) blending the compound again and vacuumizing at the same time. 
 
     
     
       5. The method of fabricating a high thermal conductivity thermal interface material as claimed in  claim 4 , wherein the silicon carbide comprises particles in size of 130 nm and 6 μm. 
     
     
       6. The method of fabricating a high thermal conductivity thermal interface material as claimed in  claim 5 , wherein the particles in size of 130 nm is 30% by weight in the silicon carbide, and the particles in size of 6 μm is 70% by weight in the silicon carbide. 
     
     
       7. The method of fabricating a high thermal conductivity thermal interface material as claimed in  claim 4 , wherein in step b), blending the compound in the range of 20 to 30 minutes.