US7482042B2ExpiredUtilityA1

Film forming method and film forming apparatus

58
Assignee: FUJIFILM CORPPriority: Sep 29, 2004Filed: Sep 27, 2005Granted: Jan 27, 2009
Est. expirySep 29, 2024(expired)· nominal 20-yr term from priority
Inventors:Atsushi Osawa
H01F 41/20C30B 30/04B05D 1/12C23C 24/04
58
PatentIndex Score
1
Cited by
8
References
8
Claims

Abstract

A film forming apparatus by which property values in a film formed by the AD method can be improved. The film forming apparatus includes: a chamber having a substrate stage for holding a substrate on which a film is to be formed; an aerosol generating unit for generating an aerosol by dispersing a raw material powder into a gas; a magnetic field applying device for applying a magnetic field to a flow path of the aerosol generated by the aerosol generating unit so as to orient crystal orientation in the raw material powder in an aerosol state; and an injection nozzle for spraying the aerosol applied with the magnetic field by the magnetic field applying device to the substrate so as to deposit the raw material powder, in which the crystal orientation is oriented, on the substrate.

Claims

exact text as granted — not AI-modified
1. A film forming method comprising the steps of:
 (a) generating an aerosol by dispersing a raw material powder into a gas; 
 (b) applying a magnetic field to a flow path of the aerosol generated at step (a) so as to orient crystal orientation in the raw material powder in an aerosol state; and 
 (c) spraying the aerosol applied with the magnetic field at step (b) to said substrate so as to deposit the raw material powder, in which the crystal orientation is oriented, on a substrate. 
 
     
     
       2. A film forming method according to  claim 1 , wherein step (b) includes applying a magnetic field to the aerosol such that magnitude of magnetic anisotropic energy is determined based on magnetic susceptibility of said raw material powder and magnitude of the applied magnetic field becomes larger than thermal perturbation energy in said raw material powder. 
     
     
       3. A film forming method according to  claim 1 , further comprising the step of:
 applying an electric field to the flow path of the aerosol generated at step (a) so as to change the crystal orientation of the raw material powder in the aerosol state. 
 
     
     
       4. A film forming method according to  claim 2 , further comprising the step of:
 applying an electric field to the flow path of the aerosol generated at step (a) so as to change the crystal orientation of the raw material powder in the aerosol state. 
 
     
     
       5. A film forming method according to  claim 1 , wherein step (a) includes generating an aerosol by accommodating a raw material powder in a container and introducing a carrier gas into said container to disperse the raw material powder therein. 
     
     
       6. A film forming method according to  claim 1 , wherein said raw material powder comprises PZT (Pb, zirconate titanate). 
     
     
       7. A film forming method according to  claim 1 , wherein said raw material powder comprises TiBaO 3  (barium titanate). 
     
     
       8. A film forming method according to  claim 1 , wherein said gas comprises at least one of nitrogen, oxygen, helium, argon and air.

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